 |
поискавой системы для электроныых деталей |
|
|
поискавой системы для электроныых деталей |
|
IRGP4063DPBF датащи(PDF) 1 Page - International Rectifier |
|
|
|||||||||||||||||||||||||||||
IRGP4063DPBF датащи(HTML) 1 Page - International Rectifier |
|
|
1 / 11 page  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE E G n-channel C VCES = 600V IC = 48A, TC = 100°C tSC ≥ 5μs, TJ(max) = 175°C VCE(on) typ. = 1.65V Features • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C •5 μS short circuit SOA • Square RBSOA • 100% of the parts tested for 4X rated current (ILM) • Positive VCE (ON) Temperature co-efficient • Ultra fast soft Recovery Co-Pak Diode • Tight parameter distribution • Lead Free Package Benefits • High Efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses • Rugged transient Performance for increased reliability • Excellent Current sharing in parallel operation • Low EMI G C E Gate Collector Emitter IRGP4063DPbF Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 96 IC @ TC = 100°C Continuous Collector Current 48 ICM Pulse Collector Current 200 ILM Clamped Inductive Load Current c 192 A IF @ TC = 25°C Diode Continous Forward Current 96 IF @ TC = 100°C Diode Continous Forward Current 48 IFM Diode Maximum Forward Current e 192 VGE Continuous Gate-to-Emitter Voltage ±20 V Transient Gate-to-Emitter Voltage ±30 PD @ TC = 25°C Maximum Power Dissipation 330 W PD @ TC = 100°C Maximum Power Dissipation 170 TJ Operating Junction and -55 to +175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) Thermal Resistance Parameter Min. Typ. Max. Units RθJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.45 °C/W RθJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 0.92 RθCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 ––– RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40 IRGP4063DPbF IRGP4063D-EPbF 1 www.irf.com © 2013 International Rectifier March 15, 2013 G C E C G G E C IRGP4063D-EPbF |
Аналогичный номер детали - IRGP4063DPBF |
|
Аналогичное описание - IRGP4063DPBF |
|
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Russian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
