PCP1203 datasheet(2/7 Pages) ONSEMI

2 / 7 page

PCP1203

No.A1348-2/7

Continued from preceding page.

Parameter

Symbol

Conditions

Ratings

Unit

Base Current

300

Collector Dissipation

When mounted on ceramic substrate (450mm2×0.8mm)

1.3

Tc=25°C

3.5

Junction Temperature

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Collector Cutoff Current

ICBO

VCB=30V, IE=0A

0.1

μA

Emitter Cutoff Current

IEBO

VEB=4V, IC=0A

0.1

μA

DC Current Gain

hFE

VCE=2V, IC=100mA

200

560

Gain-Bandwidth Product

VCE=10V, IC=300mA

500

MHz

Output Capacitance

Cob

VCB=10V, f=1MHz

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=0.75A, IB=15mA

150

225

Base-to-Emitter Saturation Voltage

VBE(sat)

IC=0.75A, IB=15mA

0.85

1.2

Collector-to-Base Breakdown Voltage

V(BR)CBO

IC=10μA, IE=0A

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

IC=1mA, RBE=∞

Emitter-to-Base Breakdown Voltage

V(BR)EBO

IE=10μA, IC=0A

Turn-On Time

ton

See speciﬁed Test Circuit.

Storage Time

tstg

205

Fall Time

Switching Time Test Circuit

Ordering Information

Device

Package

Shipping

memo

PCP1203-TD-H

PCP

1,000pcs./reel

Pb Free and Halogen Free

VCC=12V

IC=20IB1= --20IB2=0.75A

INPUT

OUTPUT

820

μF

PW=50

μs

IB1

D.C.

≤1%

IB2

IC -- VCE

Collector-to-Emitter Voltage, VCE -- V

IC -- VBE

Base-to-Emitter Voltage, VBE -- V

40mA

30mA

20mA

2.0

1.4

1.2

1.6

1.8

1.0

0.4

0.2

0.6

0.8

0.4

0.8

0.9

1.0

0.2

0.6

0.3

0.7

0.1

0.5

IB=0mA

IT14121

2mA

4mA

6mA

10mA

8mA

VCE=2V

1.6

1.2

0.6

0.8

1.4

1.0

0.2

0.4

0.2

0.4

0.6

0.8

1.2

1.0

IT14122

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