 |
поискавой системы для электроныых деталей |
|
|
поискавой системы для электроныых деталей |
|
IRG4PC40SPBF датащи(PDF) 2 Page - International Rectifier |
|
|
|||||||||||||||||||||||||||||
IRG4PC40SPBF датащи(HTML) 2 Page - International Rectifier |
|
|
2 / 9 page  IRG4PC40SPbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) — 100 150 IC = 31A Qge Gate - Emitter Charge (turn-on) — 14 21 nC VCC = 400V See Fig. 8 Qgc Gate - Collector Charge (turn-on) — 34 51 VGE = 15V td(on) Turn-On Delay Time — 22 — tr Rise Time — 18 — TJ = 25°C td(off) Turn-Off Delay Time — 650 980 IC = 31A, VCC = 480V tf FallTime — 380 570 VGE = 15V, RG = 10Ω Eon Turn-On Switching Loss — 0.45 — Energy losses include "tail" Eoff Turn-Off Switching Loss — 6.5 — mJ See Fig. 10, 11, 13, 14 Ets Total Switching Loss — 6.95 9.9 td(on) Turn-On Delay Time — 23 — TJ = 150°C, tr Rise Time — 21 — IC = 31A, VCC = 480V td(off) Turn-Off Delay Time — 1000 — VGE = 15V, RG = 10Ω tf FallTime — 940 — Energy losses include "tail" Ets Total Switching Loss — 12 — mJ See Fig. 13, 14 LE Internal Emitter Inductance — 13 — nH Measured 5mm from package Cies Input Capacitance — 2200 — VGE = 0V Coes Output Capacitance — 140 — pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance — 26 — ƒ = 1.0MHz Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA V(BR)ECS Emitter-to-Collector Breakdown Voltage T 18 — — V VGE = 0V, IC = 1.0A ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.75 — V/°C VGE = 0V, IC = 1.0mA — 1.32 1.5 IC = 31A VGE = 15V VCE(ON) Collector-to-Emitter Saturation Voltage — 1.68 — IC = 60A See Fig.2, 5 — 1.32 — IC = 31A , TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -9.3 — mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance U 12 21 — S VCE = 100V, IC = 31A — — 250 VGE = 0V, VCE = 600V — — 2.0 VGE = 0V, VCE = 10V, TJ = 25°C — — 1000 VGE = 0V, VCE = 600V, TJ = 150°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ICES Zero Gate Voltage Collector Current V µA Switching Characteristics @ TJ = 25°C (unless otherwise specified) ns ns T Pulse width ≤ 80µs; duty factor ≤ 0.1%. U Pulse width 5.0µs, single shot. Notes: Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω, (See fig. 13a) S Repetitive rating; pulse width limited by maximum junction temperature. |
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Russian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
