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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRG4PC40FPBF датащи(PDF) 2 Page - International Rectifier |
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IRG4PC40FPBF датащи(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRG4PC40FPbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) 100 150 IC = 27A Qge Gate - Emitter Charge (turn-on) 15 23 nC VCC = 400V See Fig. 8 Qgc Gate - Collector Charge (turn-on) 35 53 VGE = 15V td(on) Turn-On Delay Time 26 tr Rise Time 18 TJ = 25°C td(off) Turn-Off Delay Time 240 360 IC = 27A, VCC = 480V tf Fall Time 170 250 VGE = 15V, RG = 10Ω Eon Turn-On Switching Loss 0.37 Energy losses include "tail" Eoff Turn-Off Switching Loss 1.81 mJ See Fig. 10, 11, 13, 14 Ets Total Switching Loss 2.18 2.8 td(on) Turn-On Delay Time 25 TJ = 150°C, tr Rise Time 21 IC = 27A, VCC = 480V td(off) Turn-Off Delay Time 380 VGE = 15V, RG = 10Ω tf Fall Time 310 Energy losses include "tail" Ets Total Switching Loss 3.9 mJ See Fig. 13, 14 LE Internal Emitter Inductance 13 nH Measured 5mm from package Cies Input Capacitance 2200 VGE = 0V Coes Output Capacitance 140 pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance 29 = 1.0MHz Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 V VGE = 0V, IC = 250µA V(BR)ECS Emitter-to-Collector Breakdown Voltage 18 V VGE = 0V, IC = 1.0A ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage 0.70 V/°C VGE = 0V, IC = 1.0mA 1.50 1.7 IC = 27A VGE = 15V VCE(ON) Collector-to-Emitter Saturation Voltage 1.85 IC = 49A See Fig.2, 5 1.56 IC = 27A , TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 6.0 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage -12 mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance
9.2 12 S VCE = 100V, IC = 27A 250 VGE = 0V, VCE = 600V 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 1000 VGE = 0V, VCE = 600V, TJ = 150°C IGES Gate-to-Emitter Leakage Current ±100 nA VGE = ±20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ICES Zero Gate Voltage Collector Current V µA Switching Characteristics @ TJ = 25°C (unless otherwise specified) ns ns Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot. Notes: Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω, (See fig. 13a) Repetitive rating; pulse width limited by maximum junction temperature. |
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