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FMMT312 датащи(PDF) 2 Page - KEC(Korea Electronics)

номер детали FMMT312
подробное описание детали  2-PACK MOSFET MODULE
PDF  3 Pages
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производитель  KEC [KEC(Korea Electronics)]
домашняя страница  http://www.keccorp.com
Logo KEC - KEC(Korea Electronics)

FMMT312 датащи(HTML) 2 Page - KEC(Korea Electronics)

  FMMT312 Datasheet HTML 1Page - KEC(Korea Electronics) FMMT312 Datasheet HTML 2Page - KEC(Korea Electronics) FMMT312 Datasheet HTML 3Page - KEC(Korea Electronics)  
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2014. 1. 09
2/3
FMMT312
Revision No : 0
ELECTRICAL CHARACTERISTICS (@Ta=25
℃ Per Leg, Unless otherwise noted)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
BVDSS
ID=250㎂ , VGS=0V
150
-
-
V
Breakdown Voltage Temperature Coefficient
ΔBV
DSS/ΔTj
ID=5mA, Referenced to 25℃
-
0.17
-
V/
℃
Gate Threshold Voltage
Vth
VDS=VGS, ID=250㎂
3.0
-
5.0
V
Drain to Source Leakage Current
IDSS
VDS=150V, VGS=0V
-
-
20
μA
VDS=150V, VGS=0V, Tj=125℃
-
-
250
Gate to Source Leakage Current
IGSS
VGS=15V, with protection circuit
-
-
10
mA
VGS=-15V, with protection circuit
-
-
-10
mA
Drain to Source ON Resistance
RDS(ON)
VGS=10V, ID=400A
-
2.0
3.0
m
Ω
Dynamic
Forward Transconductance
gfs
VDS=50V, ID=400A
-
TBD
-
S
Total Gate Charge
Qg
ID=400A, VDS=75V, VGS=10V
-
TBD
-
nC
Gate to Source Charge
Qgs
-
TBD
-
Gate to Source Charge
Qgd
-
TBD
-
Turn On Delay Time
td(on)
-
TBD
-
ns
Rise Time
tr
-
TBD
-
Turn Off Delay Tine
td(off)
-
TBD
-
Fall Time
tr
-
TBD
-
Input Capacitance
Ciss
-
TBD
-
Output Capacitance
Coss
-
TBD
-
Reverse Transfer Capacitance
Crss
-
TBD
-
pF
Source-Drain Diode Ratings
Continuous Source Current
IS
-
-
450
A
Pulsed Source Current
ISP
-
-
2500
Diode Forward Voltage
VSD
ID=400A, VGS=0V
-
-
1.3
V
Reverse Recovery Time
trr
-
TBD
-
ns
Reverse Recovery Charge
Qrr
-
TBD
-
nC



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