IRFS4310PBF datasheet(2/12 Pages) IRF

2 / 12 page

IRF/B/S/SL4310PbF

www.irf.com

Notes:

Calculated continuous current based on maximum allowable junction

temperature. Package limitation current is 75A

Repetitive rating; pulse width limited by max. junction

temperature.

Limited by TJmax, starting TJ = 25°C, L = 0.35mH

RG = 25Ω, IAS = 75A, VGS =10V. Part not recommended for use

above this value.

SD ≤ 75A, di/dt ≤ 550A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

Coss eff. (TR) is a fixed capacitance that gives the same charging time

as Coss while VDS is rising from 0 to 80% VDSS.

Coss eff. (ER) is a fixed capacitance that gives the same energy as

Coss while VDS is rising from 0 to 80% VDSS.

When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended

footprint and soldering techniques refer to application note #AN-994.

Rθ is measured at TJ approximately 90°C.

Static @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

V(BR)DSS

Drain-to-Source Breakdown Voltage

100

–––

∆V

(BR)DSS/∆TJ

Breakdown Voltage Temp. Coefficient

–––

0.064

–––

V/°C

RDS(on)

Static Drain-to-Source On-Resistance

–––

5.6

7.0

Ω

VGS(th)

Gate Threshold Voltage

2.0

–––

4.0

IDSS

Drain-to-Source Leakage Current

–––

µA

–––

250

IGSS

Gate-to-Source Forward Leakage

–––

200

Gate-to-Source Reverse Leakage

–––

-200

Gate Input Resistance

–––

1.4

–––

Ω f = 1MHz, open drain

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

gfs

Forward Transconductance

160

–––

Total Gate Charge

–––

170

250

Qgs

Gate-to-Source Charge

–––

Qgd

Gate-to-Drain ("Miller") Charge

–––

td(on)

Turn-On Delay Time

–––

Rise Time

–––

110

–––

td(off)

Turn-Off Delay Time

–––

Fall Time

–––

iss

Input Capacitance

–––

7670

–––

oss

Output Capacitance

–––

540

–––

rss

Reverse Transfer Capacitance

–––

280

–––

oss eff. (ER)

Effective Output Capacitance (Energy Related)

i –––

650

–––

oss eff. (TR)

Effective Output Capacitance (Time Related)

–––

720.1

–––

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

Continuous Source Current

–––

130

(Body Diode)

ISM

Pulsed Source Current

–––

550

(Body Diode)

Ãdi

VSD

Diode Forward Voltage

–––

1.3

trr

Reverse Recovery Time

–––

TJ = 25°C

VR = 85V,

–––

TJ = 125°C

IF = 75A

Qrr

Reverse Recovery Charge

–––

120

TJ = 25°C

di/dt = 100A/µs

–––

120

180

TJ = 125°C

IRRM

Reverse Recovery Current

–––

3.3

–––

TJ = 25°C

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Conditions

DS = 50V, ID = 75A

D = 75A

GS = 20V

GS = -20V

MOSFET symbol

showing the

DS = 80V

Conditions

GS = 10V g

VGS = 0V

VDS = 50V

ƒ = 1.0MHz

VGS = 0V, VDS = 0V to 80V j, See Fig.11

VGS = 0V, VDS = 0V to 80V h, See Fig. 5

J = 25°C, IS = 75A, VGS = 0V g

integral reverse

p-n junction diode.

Conditions

GS = 0V, ID = 250µA

Reference to 25°C, I

D = 1mAd

GS = 10V, ID = 75A g

DS = VGS, ID = 250µA

DS = 100V, VGS = 0V

DS = 100V, VGS = 0V, TJ = 125°C

D = 75A

G = 2.6Ω

GS = 10V g

DD = 65V

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