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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRFS3307PBF датащи(PDF) 1 Page - International Rectifier |
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IRFS3307PBF датащи(HTML) 1 Page - International Rectifier |
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1 / 11 page  01/20/12 Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free www.irf.com 1 D2Pak IRFS3307PbF TO-220AB IRFB3307PbF TO-262 IRFSL3307PbF IRFB3307PbF IRFS3307PbF IRFSL3307PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits S D G S D G S D G S D G VDSS 75V RDS(on) typ. 5.0m : max. 6.3m : ID 120A PD - 95706D Absolute Maximum Ratings Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current d PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS(Thermally limited) Single Pulse Avalanche Energy e mJ IAR Avalanche Current à A EAR Repetitive Avalanche Energy g mJ Thermal Resistance Symbol Parameter Typ. Max. Units RJC Junction-to-Case k ––– 0.61 l RCS Case-to-Sink, Flat Greased Surface , TO-220 0.50 ––– °C/W RJA Junction-to-Ambient, TO-220 k ––– 62 RJA Junction-to-Ambient (PCB Mount) , D2Pak jk ––– 40 300 Max. 120 l 84 l 510 270 See Fig. 14, 15, 16a, 16b 200 l -55 to + 175 ± 20 1.3 l 10lb x in (1.1Nx m) |
Аналогичный номер детали - IRFS3307PBF |
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Аналогичное описание - IRFS3307PBF |
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ссылки URL |
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