MS85N06 datasheet(1/3 Pages) BWTECH

номер детали	MS85N06

подробное описание детали	Improved dv/dt Capability, High Ruggedness

PDF	3 Pages

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производитель	BWTECH [Bruckewell Technology LTD]

домашняя страница	http://www.bruckewell-semi.com

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Preliminary Data Sheet

Bruckewell Technology Corp., Ltd.

MS85N06

60V N-Channel MOSFET

FEATURES

■ RDS(on) (Max 0.013 Ω )@VGS=10V

■ Gate Charge (Typical 70nC)

■ Improved dv/dt Capability, High Ruggedness

■ 100% Avalanche Tested

■ Maximum Junction Temperature Range (175°C)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (Tc=25°C unless otherwise specified)

Symbol

Parameter

Value

Unit

VDSS

Drain-Source Voltage

60

V

Drain Current

-Continuous (TC=25℃)

85

A

ID

Drain Current

-Continuous (TC=100℃)

60

A

IDM

Drain Current

-Pulsed

340

A

VGS

Gate-Source Voltage

±20

V

EAS

Single Pulsed Avalanche Energy

929

mJ

EAR

Repetitive Avalanche Energy

17.6

mJ

dv/dt

Peak Diode Recovery dv/dt

7.0

V/ns

Power Dissipation (TC=25℃)

176

W

PD

- Derate above 25℃

1.17

W/℃

TJ,TSTG

Operating and Storage Temperature Range

–55 to + 175

℃

TL

Maximum lead temperature for soldering purposes,

1/8'' from case for 5 seconds

300

℃

• Drain current limited by maximum junction temperature

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Аналогичное описание - MS85N06

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