MS45C41 datasheet(3/8 Pages) BWTECH

номер детали	MS45C41

подробное описание детали	Low rDS(on) trench technology

PDF	8 Pages

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производитель	BWTECH [Bruckewell Technology LTD]

домашняя страница	http://www.bruckewell-semi.com

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MS45C41

N & P-Channel 40-V (D-S) MOSFET

Publication Order Number: [MS45C41]

Dynamic

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

Total Gate Charge

N-Channel

VDS = 20 V , ID = 5.3 A,

VGS = 10 V

3.6

Qgs

Gate-Source Charge

1.3

Qgd

Gate-Drain Charge

1.4

td(on)

Turn-On Delay Time

N-Channel

ID = 5.3 A , RL = 3.5 Ω,

VGEN = 10 V , RGEN = 6 Ω

VDD = 20 V

Rise Time

td(off)

Turn-Off Delay Time

Fall Time

CISS

Input Capacitance

N-Channel

VDS = 15 V

f = 1 MHz ,VGS = 0 V

287

COSS

Output Capacitance

CRSS

Reverse Transfer Capacitance

Total Gate Charge

P-Channel

VDS = -20 V , ID = -3.6 A,

VGS = -10 V

5.8

Qgs

Gate-Source Charge

1.6

Qgd

Gate-Drain Charge

2.3

Dynamic

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

td(on)

Turn-On Delay Time

P-Channel

ID = -3.6 A , RL = 5.5 Ω,

VGEN = -10 V , RGEN = 6 Ω

VDD = -20 V

Rise Time

td(off)

Turn-Off Delay Time

Fall Time

CISS

Input Capacitance

P-Channel

VDS = -15 V

f = 1 MHz ,VGS = 0 V

384

COSS

Output Capacitance

CRSS

Reverse Transfer Capacitance

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