MS34P07 datasheet(2/5 Pages) BWTECH

номер детали	MS34P07

подробное описание детали	Low thermal impedance

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производитель	BWTECH [Bruckewell Technology LTD]

домашняя страница	http://www.bruckewell-semi.com

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MS34P07

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = -250 uA

-20

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ±12 V

±10

VDS = -16 V, VGS = 0 V

-1

VDS = -16 V, VGS = 0 V, TJ = 85°C

-30

On-State Drain Current

ID(on)

VDS = -5 V, VGS = -4.5 V

VGS = -4.5 V, ID = -5 A

VGS = -2.5 V, ID = -3 A

Forward Transconductance

gfs

VDS = -15 V, ID = -5 A

Diode Forward Voltage

VSD

IS = -1.0 A, VGS = 0 V

-0.7

Total Gate Charge

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

Input Capacitance

Ciss

1450

Output Capacitance

Coss

200

Reverse Transfer Capacitance

Crss

165

Notes

Pulse test: PW <= 300us duty cycle <= 2%.

Guaranteed by design, not subject to production testing.

VDS = -10 V, VGS = -4.5 V, ID = -5 A

Electrical Characteristics

Drain-Source On-Resistance

rDS(on)

mΩ

Dynamic

Zero Gate Voltage Drain Current

Static

IDSS

VDD = -10 V, RL = 10 Ω, ID = -1 A,

VGEN = -4.5 V, RGEN = 6 Ω

VDS = -10 V, VGS = 0 V, f = 1 MHz

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