2SC6094

No. A0410-2/7

Continued from preceding page.

Parameter

Symbol

Conditions

Ratings

Unit

Base Current

IB

600

mA

Collector Dissipation

PC

1.3

W

Tc=25°C

3.5

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Collector Cutoff Current

ICBO

VCB=50V, IE=0A

1

μA

Emitter Cutoff Current

IEBO

VEB=4V, IC=0A

1

μA

DC Current Gain

hFE

VCE=2V, IC=100mA

300

600

Gain-Bandwidth Product

fT

VCE=10V, IC=500mA

390

MHz

Output Capacitance

Cob

VCB=10V, f=1MHz

18

pF

Collector-to-Emitter Saturation Voltage

VCE(sat)1

IC=1A, IB=50mA

90

135

mV

VCE(sat)2

IC=1A, IB=100mA

80

120

mV

Base-to-Emitter Saturation Voltage

VBE(sat)

IC=1A, IB=100mA

0.84

1.2

V

Collector-to-Base Breakdown Voltage

V(BR)CBO

IC=10μA, IE=0A

100

V

Collector-to-Emitter Breakdown Voltage

V(BR)CES

IC=100μA, RBE=0Ω

100

V

V(BR)CEO

IC=1mA, RBE=∞

60

V

Emitter-to-Base Breakdown Voltage

V(BR)EBO

IE=10μA, IC=0A

6.5

V

Turn-ON Time

ton

See specified Test Circuit.

35

ns

Storage Time

tstg

680

ns

Fall Time

tf

24

ns

Switching Time Test Circuit

Ordering Information

Device

Package

Shipping

memo

2SC6094-TD-E

PCP

1,000pcs./reel

Pb Free

VR10

RB

VCC=30V

IC=10IB1= --10IB2=0.5A

VBE= --5V

++

50

Ω

INPUT

OUTPUT

RL

470

μF

100

μF

PW=20

μs

IB1

D.C.

≤1%

IB2

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.