2SC4134

No.2510-2/9

Continued from preceding page.

Parameter

Symbol

Conditions

Ratings

Unit

Collector Dissipation

PC

0.8

W

Tc=25°C10

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Collector Cutoff Current

ICBO

VCB=100V, IE=0A

100

nA

Emitter Cutoff Current

IEBO

VEB=4V, IC=0A

100

nA

DC Current Gain

hFE

VCE=5V, IC=100mA

100*

400*

Gain-Bandwidth Product

fT

VCE=10V, IC=100mA

120

MHz

Output Capacitance

Cob

VCB=10V, f=1MHz

8.5

pF

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=400mA, IB=40mA

0.1

0.4

V

Base-to-Emitter Saturation Voltage

VBE(sat)

IC=400mA, IB=40mA

0.85

1.2

V

Collector-to-Base Breakdown Voltage

V(BR)CBO

IC=10μA, IE=0A

120

V

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

IC=1mA, RBE=∞

100

V

Emitter-to-Base Breakdown Voltage

V(BR)EBO

IE=10μA, IC=0A

6

V

Turn-ON Time

ton

See specified Test Circuit.

80

ns

Storage Time

tstg

850

ns

Fall Time

tf

50

ns

* : The 2SC4134 is classified by 100mA hFE as follows :

Rank

R

S

T

hFE

100 to 200

140 to 280

200 to 400

Switching Time Test Circuit

Ordering Information

Device

Package

Shipping

memo

2SC4134S-E

TP

500pcs./bag

Pb Free

2SC4134T-E

TP

500pcs./bag

2SC4134S-TL-E

TP-FA

700pcs./reel

2SC4134T-TL-E

TP-FA

700pcs./reel

VR

RL

--5V

50V

IC=10IB1= --10IB2=400mA

+

+

50Ω

INPUT

OUTPUT

RB

100μF

470μF

PW=20μs

IB1

IB2

DC≤1%

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.