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2SA2124 датащи(PDF) 2 Page - ON Semiconductor

номер детали 2SA2124
подробное описание детали  Bipolar Transistor -30V, -2A, Low VCE(sat), PNP Single PCP
PDF  7 Pages
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
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2SA2124 датащи(HTML) 2 Page - ON Semiconductor

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2SA2124
No.7920-2/7
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
Base Current
IB
--400
mA
Collector Dissipation
PC
When mounted on ceramic substrate (450mm2×0.8mm)
1.3
W
Tc=25°C
3.5
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Collector Cutoff Current
ICBO
VCB=--30V, IE=0A
--0.1
μA
Emitter Cutoff Current
IEBO
VEB=--4V, IC=0A
--0.1
μA
DC Current Gain
hFE1VCE=--2V, IC=--100mA
200
560
hFE2VCE=--2V, IC=--1.5A
65
Gain-Bandwidth Product
fT
VCE=--10V, IC=--300mA
440
MHz
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=--1.5A, IB=--75mA
--0.2
--0.4
V
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=--1.5A, IB=--75mA
--0.95
--1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=--10μA, IE=0A
--30
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=--1mA, RBE=∞
--30
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=--10μA, IC=0A
--6
V
Output Capacitance
Cob
VCB=--10V, f=1MHz
17
pF
Turn-ON Time
ton
See specified Test Circuit.
45
ns
Storage Time
tstg
200
ns
Fall Time
tf
23
ns
Switching Time Test Circuit
Ordering Information
Device
Package
Shipping
memo
2SA2124-TD-E
PCP
1,000pcs./reel
Pb Free
VR
RB
VCC= --12V
VBE=5V
+
+
50
Ω
INPUT
OUTPUT
RL
220
μF
470
μF
PW=20
μs
IB1
D.C.
≤1%
IC
IB2
IC=20IB1= --20IB2= --0.5A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.



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