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2SA2124 датащи(PDF) 2 Page - ON Semiconductor |
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2SA2124 датащи(HTML) 2 Page - ON Semiconductor |
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2 / 7 page ![]() 2SA2124 No.7920-2/7 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Base Current IB --400 mA Collector Dissipation PC When mounted on ceramic substrate (450mm2×0.8mm) 1.3 W Tc=25°C 3.5 W Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current ICBO VCB=--30V, IE=0A --0.1 μA Emitter Cutoff Current IEBO VEB=--4V, IC=0A --0.1 μA DC Current Gain hFE1VCE=--2V, IC=--100mA 200 560 hFE2VCE=--2V, IC=--1.5A 65 Gain-Bandwidth Product fT VCE=--10V, IC=--300mA 440 MHz Collector-to-Emitter Saturation Voltage VCE(sat) IC=--1.5A, IB=--75mA --0.2 --0.4 V Base-to-Emitter Saturation Voltage VBE(sat) IC=--1.5A, IB=--75mA --0.95 --1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=--10μA, IE=0A --30 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=--1mA, RBE=∞ --30 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=--10μA, IC=0A --6 V Output Capacitance Cob VCB=--10V, f=1MHz 17 pF Turn-ON Time ton See specified Test Circuit. 45 ns Storage Time tstg 200 ns Fall Time tf 23 ns Switching Time Test Circuit Ordering Information Device Package Shipping memo 2SA2124-TD-E PCP 1,000pcs./reel Pb Free VR RB VCC= --12V VBE=5V + + 50 Ω INPUT OUTPUT RL 220 μF 470 μF PW=20 μs IB1 D.C. ≤1% IC IB2 IC=20IB1= --20IB2= --0.5A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. |
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