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P3C1256L датащи(PDF) 6 Page - Pyramid Semiconductor Corporation

номер детали P3C1256L
подробное описание детали  LOW POWER 32K x 8 STATIC CMOS RAM
PDF  11 Pages
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производитель  PYRAMID [Pyramid Semiconductor Corporation]
домашняя страница  http://www.pyramidsemiconductor.com
Logo PYRAMID - Pyramid Semiconductor Corporation

P3C1256L датащи(HTML) 6 Page - Pyramid Semiconductor Corporation

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P3C1256L - 32K x 8 STATIC CMOS RAM
Page 6
Document # SRAM143 REV A
AC TEST COnDITIOnS
TRUTH TABLE
TIMIng WAVEFORM OF WRITE CyCLE nO. 2 (CE COnTROLLED)(10)
Input Pulse Levels
GND to 3.0V
Input Rise and Fall Times
3ns
Input Timing Reference Level
1.5V
Output Timing Reference Level
1.5V
Output Load
See Figures 1 and 2
Mode
CE
OE
WE
I/O
Power
Standby
H
x
x
High Z
Standby
Standby
x
x
x
High Z
Standby
D
OUT Disabled
L
H
H
High Z
Active
Read
L
L
H
D
OUT
Active
Write
L
x
L
High Z
Active
Figure 1. Output Load
Figure 2. Thevenin Equivalent
* including scope and test fixture.
note:
Because of the high speed of the P3C1256L, care must be taken when
testing this device; an inadequate setup can cause a normal function-
ing part to be rejected as faulty. Long high-inductance leads that cause
supply bounce must be avoided by bringing the V
CC and ground planes
directly up to the contactor fingers. A 0.01 µF high frequency capacitor
is also required between V
CC and ground. To avoid signal reflections,
proper termination must be used; for example, a 50Ω test environment
should be terminated into a 50Ω load with 1.77V (Thevenin Voltage) at
the comparator input, and a 589Ω resistor must be used in series with
D
OUT to match 639Ω (Thevenin Resistance).



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