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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF7606PBF датащи(PDF) 2 Page - International Rectifier |
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IRF7606PBF датащи(HTML) 2 Page - International Rectifier |
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2 / 7 page  IRF7606PbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.4A, VGS = 0V trr Reverse Recovery Time ––– 43 64 ns TJ = 25°C, IF = -2.4A Qrr Reverse Recovery Charge ––– 50 76 nC di/dt = -100A/µs Source-Drain Ratings and Characteristics -29 -1.8 A S D G Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.024 ––– V/°C Reference to 25°C, ID = -1mA ––– 0.075 0.09 VGS = - 10V, ID = -2.4A 0.130 0.15 VGS = -4.5V, ID = -1.2A VGS(th) Gate Threshold Voltage -1.0 ––– ––– V VDS = VGS, ID = -250µA gfs Forward Transconductance 2.3 ––– ––– S VDS = -10V, ID = -1.2A ––– ––– -1.0 VDS = -24V, VGS = 0V ––– ––– -25 VDS = -24V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V Qg Total Gate Charge ––– 20 30 ID = -2.4A Qgs Gate-to-Source Charge ––– 2.1 3.1 nC VDS = -24V Qgd Gate-to-Drain ("Miller") Charge ––– 7.6 11 VGS = -10V, See Fig. 9 td(on) Turn-On Delay Time ––– 13 ––– VDD = -10V tr Rise Time ––– 20 ––– ID = -2.4A td(off) Turn-Off Delay Time ––– 43 ––– RG = 6.0Ω tf Fall Time ––– 39 ––– RD = 4.0Ω Ciss Input Capacitance ––– 520 ––– VGS = 0V Coss Output Capacitance ––– 300 ––– pF VDS = -25V Crss Reverse Transfer Capacitance ––– 140 ––– ƒ = 1.0MHz, See Fig. 8 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA ns Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 10 ) ISD ≤ -2.4A, di/dt ≤ -130A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. Surface mounted on FR-4 board, t ≤ 10sec. |
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