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IRF7480M датащи(PDF) 2 Page - International Rectifier

номер детали IRF7480M
подробное описание детали  Brushed Motor drive applications
PDF  12 Pages
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производитель  IRF [International Rectifier]
домашняя страница  http://www.irf.com
Logo IRF - International Rectifier

IRF7480M датащи(HTML) 2 Page - International Rectifier

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IRF7480MTRPbF
2
www.irf.com
© 2015 International Rectifier
Submit Datasheet Feedback
May 14, 2015
 
Notes:
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Used double sided cooling , mounting pad with large heatsink.
Absolute Maximum Ratings
  
 
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
217
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
137
A
IDM
Pulsed Drain Current 
868
 
PD @TC = 25°C
Maximum Power Dissipation
96
W
Linear Derating Factor
0.77
W/°C
VGS
Gate-to-Source Voltage
± 20
V
TJ
Operating Junction and
-55 to + 150
°C
TSTG
Storage Temperature Range
Avalanche Characteristics
  
EAS (Thermally limited)
Single Pulse Avalanche Energy 
81
EAS (Thermally limited)
Single Pulse Avalanche Energy 
206
IAR
Avalanche Current 
See Fig.15,16, 23a, 23b
A
EAR
Repetitive Avalanche Energy 
mJ
Thermal Resistance
  
 
Symbol
Parameter
Typ.
Max.
Units
RJA
Junction-to-Ambient 
–––
45
°C/W
RJA
Junction-to-Ambient 
12.5
–––
RJA
Junction-to-Ambient 
20
–––
RJC
Junction-to-Case 
–––
1.3
RJ-PCB
Junction-to-PCB Mounted
0.75
–––
mJ
Static @ TJ = 25°C (unless otherwise specified)
   
 
 
 
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
40
–––
–––
V
VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
30
––– mV/°C Reference to 25°C, ID = 1.0mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
0.95 1.20
m

VGS = 10V, ID = 132A 
––– 1.60
––– 
VGS = 6.0V, ID = 66A 
VGS(th)
Gate Threshold Voltage
2.1
3.0
3.9
V
VDS = VGS, ID = 150µA
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
µA
VDS = 40V, VGS = 0V
–––
–––
150
VDS = 40V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = -20V
RG
Internal Gate Resistance
–––
0.81
–––
nA
TC measured with thermocouple mounted to top (Drain) of part.
Surface mounted on 1 in. square Cu
board (still air).
Mounted to a PCB with small clip
heatsink (still air)
 
Mounted on minimum footprint full size
board with metalized back and with
small clip heatsink (still air)



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