SGC4263Z datasheet(2/9 Pages) RFMD

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DS140502

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SGC4263Z

Typical RF Performance with Application Circuit at Key Operating Frequencies (App Circuit Data Unless Noted Otherwise)

Typical Performance with Bias Tee, VD=3V, ID=55mA

Absolute Maximum Ratings

Parameter

Rating

Unit

Max Device Current (ID)110

Max Device Voltage (VD)4

Max RF Input Power1

dBm

Max RF Input Power2

dBm

Max Junction Temp (TJ)+150

°C

Operating Temp Range (TL)

-40 to +85

°C

Max Storage Temp

+150

°C

ESD Rating - Human Body Model

(HBM)

Class 1C

Moisture Sensitivity Level

MSL 1

Notes

1. Load condition: VSWR ≤ 10:1; VCC ≤ 3.5V

2. Load condition: VSWR ≤ 3:1; VCC ≤ 3.2V

Operation of this device beyond any one of these limits may cause permanent

damage. For reliable continuous operation, the device voltage and current must not

exceed the maximum operating values specified in the table on page one.

Bias Conditions should also satisfy the following expression:

IDVD<(TJ-TL)/RTH, j-l and TL=Source Lead Temperature

Parameter

Unit

*100

MHz

500

MHz

850

MHz

1950

MHz

2500

MHz

*3500

MHz

Small Signal Gain (G)

15.4

15.0

14.7

14.0

13.1

11.6

Output Third Order Intercept Point (OIP3)

dBm

33.0

32.0

30.5

30.0

29.5

27.0

Output Power at 1dB Compression (P1dB)

dBm

15.4

15.2

15.1

15.3

14.3

Input Return Loss (IRL)

14.5

16.0

21.5

23.5

16.0

13.0

Output Return Loss (ORL)

13.5

17.0

21.0

20.5

9.0

Reverse Isolation (S12)

18.519.019.519.519.518.5

Noise Figure (NF)

2.8

3.2

3.1

3.3

3.5

3.8

Test Conditions: VD=3V, ID=55mA Typ. OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, TL=25°C, ZS=ZL=50, *Bias Tee Data

Noise Figure versus Frequency

2.0

2.5

3.0

3.5

4.0

4.5

5.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

Frequency (GHz)

25°C

85°C

OIP3 versus Frequency

(0dBm/tone, 1MHz spacing)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

Frequency (GHz)

-40°C

25°C

85°C

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