BAV99_15 datasheet(1/2 Pages) KEC

номер детали	BAV99

подробное описание детали	SILICON EPITAXIAL PLANAR DIODE

PDF	2 Pages

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производитель	KEC [KEC(Korea Electronics)]

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2011. 8. 10

1/2

SEMICONDUCTOR

TECHNICAL DATA

BAV99

SILICON EPITAXIAL PLANAR DIODE

Revision No : 2

ULTRA HIGH SPEED SWITCHING APPLICATION.

FEATURES

・Small Package : SOT-23.

・Low Forward Voltag : V

F=0.9V(Typ.).

・Fast Reverse Recovery Time : t

rr=1.6ns(Typ.).

・Small Total Capacitance : C

T=0.9pF(Typ.).

MAXIMUM RATING (Ta=25

℃)

DIM

MILLIMETERS

SOT-23

A

B

C

D

E

2.93 0.20

1.30+0.20/-0.15

0.40+0.15/-0.05

2.40+0.30/-0.20

G

1.90

H

J

K

L

M

N

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

Q

0.1 MAX

0.20 MIN

1.00+0.20/-0.10

M

E

1

2

3

B

1.30 MAX

LL

PP

P7

+

_

Q

1. CATHODE 1

2. ANODE 2

3. ANODE 1 / CATHODE 2

2

1

3

ELECTRICAL CHARACTERISTICS (Ta=25

℃)

Type Name

Marking

Lot No.

H 8

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Forward Voltage

VF(1)

IF=1mA

-

0.60

-

V

VF(2)

IF=10mA

-

0.72

-

VF(3)

IF=150mA

-

1.25

Reverse Current

IR

VR=80V

-

0.5

μA

Total Capacitance

CT

VR=0, f=1MHz

-

0.9

3.0

pF

Reverse Recovery Time

trr

IF=10mA

-

1.6

4.0

nS

CHARACTERISTIC

SYMBOL

RATING

UNIT

Maximum (Peak) Reverse Voltage

VRM

85

V

Reverse Voltage

VR

80

V

Continuous Forward Current

IF

250

mA

Surge Current (10ms)

IFSM

2

A

Power Dissipation

PD

225*

mW

300**

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55

～150

℃

* Note1 : Package Mounted On FR-5 Board (25.4

×19.05×1.57mm)

** Note2 : Package Mounted On 99.5% Alumina (10

×8×0.6mm)

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