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RFHA3832 датащи(PDF) 1 Page - RF Micro Devices |
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RFHA3832 датащи(HTML) 1 Page - RF Micro Devices |
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1 / 11 page ![]() RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS131205 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. RF MICRO DEVICES ® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc. 1 of 11 PRELIMINARY RFHA3832 10W GaN Wide-Band Power Amplifier The RFHA3832 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier design. The RFHA3832 is an input matched GaN transistor packaged in an air cavity ceramic package which provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of optimized input matching network within the package that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth. Functional Block Diagram Ordering Information RFHA3832S2 Sample bag with 2 pieces RFHA3832SB Bag with 5 pieces RFHA3832SQ Bag with 25 pieces RFHA3832SR Short reel with 100 pieces RFHA3832TR7 7” reel with 500 pieces RFHA3832TR13 13” reel with 2500 pieces RFHA3832PCBA-410 Fully assembled evaluation board 30 to 1000 MHz, 48V operation Package: AIN Leadless Chip Carrier, SO8 Features ■ Advanced GaN HEMT Technology ■ Output Power of 10W ■ Advanced Heat-Sink Technology ■ 30MHz to 1000MHz Instantaneous Bandwidth ■ Input Internally Matched to 50 Ω ■ 48V Operation Typical Performance Output Power 40dBm Gain 15.5dB Power Added Efficiency 48% ■ -40°C to 85°C Operating Temperature ■ Large Signal Models Available Applications ■ Class AB Operation for Public Mobile Radio ■ Power Amplifier Stage for Commercial Wireless Infrastructure ■ General Purpose Tx Amplification ■ Test Instrumentation ■ Civilian and Military Radar RFHA3832 |
Аналогичный номер детали - RFHA3832 |
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Аналогичное описание - RFHA3832 |
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