PD - 95039

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

powerapplications. Withtheseimprovements,multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

10/7/04

SO-8

IRF7313PbF

Description

Symbol

Maximum

Units

Drain-Source Voltage

30

Gate-Source Voltage

± 20

6.5

5.2

Pulsed Drain Current

30

Continuous Source Current (Diode Conduction)

2.5

2.0

1.3

Single Pulse Avalanche Energy

‚

82

mJ

Avalanche Current

4.0

A

Repetitive Avalanche Energy

0.20

mJ

Peak Diode Recovery dv/dt

ƒ

dv/dt

5.8

V/ ns

Junction and Storage Temperature Range

-55 to + 150

°C

Thermal Resistance Ratings

Parameter

Symbol

Limit

Units

Maximum Junction-to-Ambient

…

62.5

°C/W

Continuous Drain Current

…

Maximum Power Dissipation

…

A

V

W

D1

D1

D2

D2

G1

S2

G2

S1

Top View

8

1

2

3

4

5

6

7

l

Generation V Technology

l

Ultra Low On-Resistance

l

Dual N-Channel MOSFET

l

Surface Mount

l

Fully Avalanche Rated

l

Lead-Free