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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF6723M2DPBF датащи(PDF) 2 Page - International Rectifier |
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IRF6723M2DPBF датащи(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRF6723M2DTR/TR1PbF 2 www.irf.com Notes:
Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400µs; duty cycle ≤ 2%. Static @ TJ = 25°C (each die unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 20 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 5.2 6.6 m Ω ––– 8.6 11.3 VGS(th) Gate Threshold Voltage 1.35 1.8 2.35 V ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -7.2 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 34 ––– ––– S Qg Total Gate Charge ––– 9.4 14 Qgs1 Pre-Vth Gate-to-Source Charge ––– 2.2 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 1.2 ––– nC Qgd Gate-to-Drain Charge ––– 3.3 ––– Qgodr Gate Charge Overdrive ––– 2.7 ––– See Fig. 2 Qsw Switch Charge (Qgs2 + Qgd) ––– 4.5 ––– Qoss Output Charge ––– 6.3 ––– nC RG Gate Resistance ––– 0.4 ––– Ω td(on) Turn-On Delay Time ––– 14 ––– tr Rise Time ––– 41 ––– td(off) Turn-Off Delay Time ––– 15 ––– ns tf Fall Time ––– 20 ––– Ciss Input Capacitance ––– 1380 ––– Coss Output Capacitance ––– 290 ––– pF Crss Reverse Transfer Capacitance ––– 120 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 32 (Body Diode) A ISM Pulsed Source Current ––– ––– 130 (Body Diode)Ãg VSD Diode Forward Voltage ––– ––– 1.0 V trr Reverse Recovery Time ––– 16 24 ns Qrr Reverse Recovery Charge ––– 17 26 nC di/dt = 370A/µs i TJ = 25°C, IS = 12A, VGS = 0V i showing the integral reverse p-n junction diode. VGS = 4.5V, ID = 12A i VDS = VGS, ID = 25µA TJ = 25°C, IF =12A VGS = 4.5V ID = 12A VGS = 0V VDS = 15V ID = 12A VDD = 15V, VGS = 4.5VÃi Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 15A i VGS = 20V VGS = -20V VDS = 24V, VGS = 0V VDS = 15V VDS = 24V, VGS = 0V, TJ = 125°C MOSFET symbol RG= 6.8Ω VDS = 15V, ID =12A Conditions ƒ = 1.0MHz VDS = 16V, VGS = 0V |
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