Features

1 of 7

Optimum Technology

Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

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Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

RF MEMS

SGA4286Z

DC to 5000MHz, CASCADABLE SiGe HBT

MMIC AMPLIFIER

The SGA4286Z is a high performance SiGe HBT MMIC Amplifier. A Darling-

excellent thermal performance. The heterojunction increases breakdown

voltage and minimizes leakage current between junctions. Cancellation of

emitter junction non-linearities results in higher suppression of intermodu-

lation products. Only two DC-blocking capacitors, a bias resistor, and an

optional RF choke are required for operation.

0

4

8

12

16

01

23

45

Frequency (GHz)

-40

-30

-20

-10

0

GAIN

IRL

ORL

Gain & Return Loss vs. Frequency

V



Broadband Operation: DC to

5000MHz



Cascadable 50

Ω



Operates from Single Supply



Low Thermal Resistance

Package

Applications



PA Driver Amplifier



Cellular, PCS, GSM, UMTS



IF Amplifier



Wireless Data, Satellite

DS100915



Package: SOT-86

SGA4286ZDC

to 5000MHz,

Cascadable

SiGe HBT

MMIC Ampli-

fier

Parameter

Specification

Unit

Condition

Min.

Typ.

Max.

Small Signal Gain

12.0

13.5

15.0

dB

850MHz

12.0

dB

1950MHz

11.1

dB

2400MHz

Output Power at 1dB Compression

15.0

dBm

850MHz

13.0

dBm

1950MHz

Output Third Intercept Point

29.1

dBm

850MHz

26.5

dBm

1950MHz

Bandwidth Determined by Return

Loss

5000

MHz

>10dB

Input Return Loss

26.6

dB

1950MHz

Output Return Loss

22.9

dB

1950MHz

Noise Figure

3.7

dB

1950MHz

Device Operating Voltage

2.9

3.2

3.5

V

Device Operating Current

41

45

49

mA

Thermal Resistance

(Junction - Lead)

97

°C/W