ZXMP2120G4

Document number: DS33602 Rev. 4 - 2

2 of 7

www.diodes.com

May 2015

© Diodes Incorporated

ZXMP2120G4

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

-200

V

Gate-Source Voltage

±20

V

-200

mA

Pulsed Drain Current (Note 6)

-1

A

Pulsed Source Current (Body Diode) (Note 6)

-1

A

Characteristic

Symbol

Value

Unit

Linear Derating Factor

2.0

1.6

W

mW/°C

Thermal Resistance, Junction to Ambient (Note 5)

62.5

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-200

-

-

V

Zero Gate Voltage Drain Current

-

-

-10

-100

µA

Gate-Source Leakage

-

-

20

nA

ON CHARACTERISTICS

Gate Threshold Voltage

-1.5

-

-3.5

V

Static Drain-Source On-Resistance (Note 7)

-

-

25

Ω

Forward Transconductance (Notes 7 & 8)

50

-

-

mS

On-State Drain Current (Note 7)

-300

-

-

mA

DYNAMIC CHARACTERISTICS

Input Capacitance (Note 8)

-

-

100

pF

f = 1.0MHz

Output Capacitance (Note 8)

-

-

25

pF

Reverse Transfer Capacitance (Note 8)

-

-

7

pF

Turn-On Delay Time (Notes 8 & 9)

-

-

7

ns

Turn-On Rise Time (Notes 8 & 9)

-

-

15

ns

Turn-Off Delay Time (Notes 8 & 9)

-

-

12

ns

Turn-Off Fall Time (Notes 8 & 9)

-

-

15

ns

Notes:

5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

6. Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.

7. Measured under pulsed conditions. Pulse width

≤ 300µs. Duty cycle ≤ 2%.

8. Sample test.

9. Switching characteristics are independent of operating junction temperature.