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ZXMP6A17GTC датащи(PDF) 4 Page - Diodes Incorporated |
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ZXMP6A17GTC датащи(HTML) 4 Page - Diodes Incorporated |
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4 / 8 page ![]() ZXMP6A17G Document Number DS33375 Rev. 7 - 2 4 of 8 www.diodes.com February 2015 © Diodes Incorporated ZXMP6A17G Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS -60 V ID = -250µA, VGS = 0V Zero Gate Voltage Drain Current IDSS -0.5 µA VDS = -60V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = 20V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) -1.0 V ID = -250μA, VDS = VGS Static Drain-Source On-Resistance (Note 9) RDS(ON) 0.096 0.125 Ω VGS = -10V, ID = -2.2A 0.120 0.190 VGS = -4.5V, ID = -1.8A Forward Transconductance (Notes 9 & 10) gfs 4.7 S VDS = -15V, ID = -2.2A Diode Forward Voltage (Note 9) VSD -0.85 -0.95 V IS = -2.0A, VGS = 0V, TJ = +25°C Reverse Recovery Time (Note 10) trr 25.1 ns IS = -1.7A, di/dt = 100A/µs, TJ = +25°C Reverse Recovery Charge (Note 10) Qrr 27.2 nC DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Ciss 637 pF VDS = -30V, VGS = 0V f = 1MHz Output Capacitance Coss 70.0 pF Reverse Transfer Capacitance Crss 53.0 pF Total Gate Charge (Note 11) Qg 9.0 nC VGS = -4.5V VDS = -30V ID = -2.2A Total Gate Charge (Note 11) Qg 17.7 nC VGS = -10V Gate-Source Charge (Note 11) Qgs 1.6 nC Gate-Drain Charge (Note 11) Qgd 4.4 nC Turn-On Delay Time (Note 11) tD(on) 2.6 ns VDD = -30V, VGS = -10V ID = -1A, RG 6.0Ω Turn-On Rise Time (Note 11) tr 3.4 ns Turn-Off Delay Time (Note 11) tD(off) 26.2 ns Turn-Off Fall Time (Note 11) tf 11.3 ns Notes: 9. Measured under pulsed conditions. Pulse width 300µs; duty cycle 2%. 10. For design aid only, not subject to production testing. 11. Switching characteristics are independent of operating junction temperatures. |
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