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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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ZXMP4A16GTC датащи(PDF) 2 Page - Diodes Incorporated |
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ZXMP4A16GTC датащи(HTML) 2 Page - Diodes Incorporated |
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2 / 7 page  ZXMP4A16G Document number: DS33584 Rev.5 - 2 2 of 7 www.diodes.com February 2015 © Diodes Incorporated ZXMP4A16G Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -40 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current, VGS = -10V Steady State TA = +25°C (Note 6) TA = +70°C (Note 6) TA = +25°C (Note 5) ID -6.4 -5.1 -4.6 A Maximum Body Diode Forward Current (Note 6) IS -5.2 A Pulsed Drain Current (Note 7) IDM -21 A Pulsed Source Current (Note 7) ISM -21 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation Linear Derating Factor TA = +25°C (Note 5) PD 2.0 16 W mW/°C Total Power Dissipation Linear Derating Factor TA = +25°C (Note 6) PD 3.9 31 W mW/°C Thermal Resistance, Junction to Ambient Steady state (Note 5) RθJA 62.5 °C/W Steady state (Note 6) 32 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BVDSS -40 V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS -1.0 µA VDS = -40V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = 20V, VDS = 0V ON CHARACTERISTICS (Note 9) Gate Threshold Voltage VGS(th) -1.0 V VDS = VGS, ID = -250µA Static Drain-Source On-Resistance (Note 8) RDS(ON) 60 m Ω VGS = -10V, ID = -3.8A 100 VGS = -4.5V, ID = -2.9A Diode Forward Voltage (Note 8) VSD -0.85 -1.2 V VGS = 0V, IS = -3.4A Forward Transconductance (Notes 8 & 10) gfs 8.85 S VDS = -15V, ID = -3.8A DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Ciss 1,007 pF VDS = -20V, VGS = 0V f = 1.0MHz Output Capacitance Coss 130 Reverse Transfer Capacitance Crss 85 Total Gate Charge (VGS = -5.0V) Qg 13.6 nC VDS = -20V, ID = -3.8A, Total Gate Charge (VGS = -10V) Qg 26.1 Gate-Source Charge Qgs 2.8 Gate-Drain Charge Qgd 4.8 Turn-On Delay Time tD(on) 2.33 nS VGS = -10V, VDD = -20V, RG = 6.0Ω, ID= -1.0A Turn-On Rise Time tr 8.84 Turn-Off Delay Time tD(off) 29.18 Turn-Off Fall Time tf 12.54 Body Diode Reverse Recovery Time trr 27.2 nS IF = -3A, dI/dt = 100A/μs Body Diode Reverse Recovery Charge Qrr 25.4 nC Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 6. For a device surface mounted on FR4 PCB measured at t 10 secs. 7. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width limited by maximum junction temperature. 8. Measured under pulsed conditions. Width ≤300μs. Duty cycle ≤ 2%. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. |
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