MRF314 datasheet(2/5 Pages) MACOM

номер детали	MRF314

подробное описание детали	RF POWER TRANSISTORS NPN SILICON

PDF	5 Pages

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производитель	MACOM [Tyco Electronics]

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ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)

Characteristic

Unit

Max

Typ

Min

Symbol

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 30 Vdc, IE = 0, f = 1.0 MHz)

Cob

—

FUNCTIONAL TESTS (Figure 1)

Common–Emitter Amplifier Power Gain

(VCC = 28 Vdc, Pout = 30 W, f = 150 MHz)

GPE

13.5

—

Collector Efficiency

(VCC = 28 Vdc, Pout = 30 W, f = 150 MHz)

—

Load Mismatch

(VCC = 28 Vdc, Pout = 30 W, f = 150 MHz,

VSWR = 30:1 all phase angles)

No Degradation in Power Output

Figure 1. 150 MHz Test Circuit

RFC3

C10

RFC2

RFC1

RF OUTPUT

DC + 28 Vdc

DUT

RF INPUT

C1, C7 — 18 pF, 100 mil ATC

C2 — 68 pF, 100 mil ATC

C3, C6 — Johanson #JMC 5501

C4 — 270 pF, 100 mil ATC

C5 — 240 pF, 100 mil ATC

C8, C9 — 100 pF Underwood

C10 — 1.0

µF Tantalum

L1 — 2 Turns, 2.5

″ #20 Wire, ID = 0.275″

R1, R2 — 10

Ω, 1.0 W

RFC1 — 15

µH Molded Coil

RFC2 — 2 Turns, 2.5

″ #20 Wire, ID = 0.2″

RFC3 — Ferroxcube VK200–19/4B

Z1 — Microstrip, 0.168

″ W x 1.6″ L

Z2 — Microstrip, 0.168

″ W x 1.2″ L

Board — Glass Teflon

εr = 2.55

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