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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MRF313 датащи(PDF) 1 Page - Tyco Electronics |
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MRF313 датащи(HTML) 1 Page - Tyco Electronics |
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1 / 3 page  The RF Line NPN Silicon High-Frequency Transistor . . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 1.0 Watt Power Gain = 15 dB Min Efficiency = 45% Typ • Emitter Ballast and Low Current Density for Improved MTBF • Common Emitter for Improved Stability MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 30 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — Continuous IC 150 mAdc Total Device Dissipation @ TC = 25°C Derate above 25 °C PD 6.1 35 Watts mW/ °C Storage Temperature Range Tstg –65 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 28.5 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 30 — — Vdc Collector–Emitter Breakdown Voltage (IC = 5.0 mAdc, VBE = 0) V(BR)CES 35 — — Vdc Collector–Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO 35 — — Vdc Emitter–Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) V(BR)EBO 3.0 — — Vdc Collector Cutoff Current (VCE = 20 Vdc, IB = 0) ICEO — — 1.0 mAdc (continued) MRF313 1.0 W, 400 MHz HIGH–FREQUENCY TRANSISTOR NPN SILICON CASE 305A–01, STYLE 1 Order this document by MRF313/D SEMICONDUCTOR TECHNICAL DATA 1 |
Аналогичный номер детали - MRF313 |
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Аналогичное описание - MRF313 |
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