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RFHA1027 датащи(PDF) 3 Page - RF Micro Devices |
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RFHA1027 датащи(HTML) 3 Page - RF Micro Devices |
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3 / 10 page ![]() RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140204 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 10 RFHA1027 Parameter Specification Unit Condition Min Typ Max RF Functional Test Test Conditions: PW = 1ms, DC = 10%, VDSQ = 50V, IDQ = 750mA, T = 25ºC, Performance in a standard tuned test fixture. Power Gain 12.5 13.6 dB f = 1200MHz, PIN = 44dBm Input Return Loss -5 dB Output Power 56.5 57.6 dBm Drain Efficiency 53 % Power Gain 12.5 13.3 dB f = 1300MHz, PIN = 44dBm Input Return Loss -5 dB Output Power 56.5 57.3 dBm Drain Efficiency 55 % Power Gain 12.5 12.8 dB f = 1400MHz, PIN = 44dBm Input Return Loss -5 dB Output Power 56.5 56.8 dBm Drain Efficiency 54 % RF Typical Performance Frequency Range 1200 1400 MHz Low Power Gain 15.8 dB POUT = 36dBm [1,2] Power Gain 13.3 dB PIN = 44dBm [1,2] Gain Variation with Temperature -0.019 dB/°C At peak output power [1,2] Output Power (PSAT) 57 dBm Peak output power [1,2] 500 W Drain Efficiency 54 % At peak output power [1,2] [1] Test Conditions: PW = 1ms, DC = 10%, VDSQ = 50V, IDQ = 750mA, T = 25ºC. [2] Performance in a standard tuned test fixture. |
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