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RF3833 датащи(PDF) 1 Page - RF Micro Devices

номер детали RF3833
подробное описание детали  25W GaN Wide-Band Power Amplifier
PDF  10 Pages
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производитель  RFMD [RF Micro Devices]
домашняя страница  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RF3833 датащи(HTML) 1 Page - RF Micro Devices

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RF Micro Devices Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421
DS140121
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
RF MICRO DEVICES
® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
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PRELIMINARY
RF3833
25W GaN Wide-Band Power Amplifier
30MHz to 2000MHz
The RF3833 is a wideband Power Amplifier designed for CW and pulsed
applications such as wireless infrastructure, RADAR, two way radios, and
general purpose amplification. Using an advanced high power density
Gallium Nitride (GaN) semiconductor process, these high-performance
amplifiers achieve high efficiency, flat gain, and large instantaneous
bandwidth in a single amplifier design. The RF3833 is an input matched
GaN transistor packaged in an air cavity copper package which provides
excellent thermal stability through the use of advanced heat-sink and
power dissipation technologies. Ease of integration is accomplished
through the incorporation of optimized input matching network within the
package that provides wideband gain and power performance in a single
amplifier. An external output match offers the flexibility of further
optimizing power and efficiency for any sub-band within the overall
bandwidth.
Functional B
Functional Block Diagram
Ordering Information
RF3833S2
Sample bag with 2 pieces
RF3833SB
Bag with 5 pieces
RF3833SQ
Bag with 25 pieces
RF3833SR
Short Reel with 100 pieces
RF3833TR7
7" Reel with 750 pieces
RF3833PCBA-410
Evaluation Board: 30MHz to 2000MHz; 48V operation
Package: Air-Cavity Cu
Features
Advanced GaN HEMT Technology
Output Power of 25W
Advanced Heat-Sink Technology
30MHz to 2000MHz Instantaneous
Bandwidth
Input Internally Matched to 50
Ω
48V Operation Typical
Performance
POUT 44.5dBm
Gain 11.5dB
Power Added Efficiency 50%
(30MHz to 2000MHz)
-40°C to 85°C Operating
Temperature
Large Signal Models Available
EAR99 Export Control
Applications
Class AB Operation for Public
Mobile Radio
Power Amplifier Stage for
Commercial Wireless Infrastructure
General Purpose Tx Amplification
Test and Instrumentation
Civilian and Military Radar
RF3833


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Аналогичное описание - RF3833

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