Figure 1. MRF166C 500 MHz Test Circuit

R2

R3

RFC2

RFC1

C11

+

–

+

–

Vdc

R1

RF

INPUT

DUT

Z2

Z4

C7

C6

RF

OUTPUT

VDD = 28 V

C4

C9

C8

C10

C5

BIAS

Z3

C1

C3

Z1

C2

C1, C7

200 pF, Chip Capacitor

C2, C6

2–10 pF, Trimmer Capacitor, Johansen

C3

27 pF, ATC 100 mil Chip Capacitor

C4, C8

0.1

µF, Chip Capacitor

C5

15 pF, ATC 100 mil Chip Capacitor

C9, C10

680 pF, Feedthru Capacitor

C11

50

µF, 50 V, Electrolytic Capacitor

R1

120

Ω, 1/2 W Resistor

R2

10 k

Ω, 1/2 W Resistor

R3

1 k

Ω, 1/2 W Resistor

RFC1

Ferroxcube VK200 19/4B

RFC2

10 Turns AWG #18, 0.125

″ I.D., Enameled

Board Material

0.062

″ Teflon® Fiberglass

1 oz. Copper Clad Both Sides

εr = 2.56

350 mils

600 mils

C2

C3

C5

C6

825 mils

1650 mils

Z1

0.120

″ x 3.3″, Microstrip Line

Z2

0.120

″ x 2.1″, Microstrip Line

Z3, Z4

0.120

″ x 0.25″, Microstrip Line

TYPICAL CHARACTERISTICS

100

1

2

5

10

20

50

25

20

15

10

5

0

Coss

Ciss

Crss

VGS = 0 V

f = 1 MHz

VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

Figure 2. Capacitance versus Drain–Source Voltage

100

10

0

VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

Figure 3. DC Safe Operating Area

10

1

0.1

TC = 25°C

3

REV 10