Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage (VGS = 0, ID = 1.0 mA)

V(BR)DSS

65

—

—

Vdc

Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0)

IDSS

—

—

0.5

mAdc

Gate–Source Leakage Current (VGS = 20 V, VDS = 0)

IGSS

—

—

1.0

µAdc

ON CHARACTERISTICS

Gate Threshold Voltage (ID = 10 mA, VDS = 10 V)

VGS(th)

2.0

4.0

5.0

Vdc

Forward Transconductance (VDS = 10 V, ID = 100 mA)

gfs

80

110

—

mmhos

DYNAMIC CHARACTERISTICS

Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)

Ciss

—

3.0

—

pF

Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)

Coss

—

4.0

—

pF

Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)

Crss

—

0.45

—

pF

FUNCTIONAL CHARACTERISTICS (Figure 1)

Common Source Power Gain

(VDD = 28 Vdc, Pout = 2.0 W, f = 500 MHz, IDQ = 25 mA)

Gps

16

18

—

dB

Drain Efficiency (Figure 1)

(VDD = 28 Vdc, Pout = 2.0 W, f = 500 MHz, IDQ = 25 mA)

η

50

55

—

%

Electrical Ruggedness (Figure 1)

(VDD = 28 Vdc, Pout = 2.0 W, f = 500 MHz, IDQ = 25 mA,

VSWR 30:1 at all Phase Angles)

ψ

No Degradation in Output Power

Series Equivalent Input Impedance

(VDD = 28 V, Pout = 2.0 W, f = 500 MHz, IDQ = 25 mA)

Zin

—

5.9 – j19.4

—

Ohms

Series Equivalent Output Impedance

(VDD = 28 V, Pout = 2.0 W, f = 500 MHz, IDQ = 25 mA)

Zout

—

14.5 – j29

—

Ohms

2

REV 9