MRF151 datasheet(3/8 Pages) MACOM

номер детали	MRF151

подробное описание детали	N-CHANNEL BROADBAND RF POWER MOSFET

PDF	8 Pages

Scroll/Zoom	100%

производитель	MACOM [Tyco Electronics]

домашняя страница	http://www.macom.com

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3 / 8 page

Figure 2. 175 MHz Test Circuit

Figure 3. Capacitance versus

Drain–Source Voltage

TYPICAL CHARACTERISTICS

Figure 4. Gate–Source Voltage versus

Case Temperature

BIAS

0–12 V

C11

+50 V

D.U.T.

RF INPUT

RF OUTPUT

C10

RFC2

1000

500

200

100

1020

304050

VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

1.04

0.9

– 25

100

TC, CASE TEMPERATURE (°C)

1.03

1.02

1.01

0.99

0.98

0.97

0.96

0.95

0.94

0.93

0.92

0.91

Ciss

Coss

Crss

1D = 5 A

4 A

2 A

1 A

250 mA

100 mA

C1, C2, C8 — Arco 463 or equivalent

C3 — 25 pF, Unelco

C4 — 0.1

µF, Ceramic

C5 — 1.0

µF, 15 WV Tantalum

C6 — 15 pF, Unelco J101

C7 — 25 pF, Unelco J101

C9 — Arco 262 or equivalent

C10 — 0.05

µF, Ceramic

C11 — 15

µF, 60 WV Electrolytic

D1 — 1N5347 Zener Diode

L1 — 3/4

″, #18 AWG into Hairpin

L2 — Printed Line, 0.200

″ x 0.500″

L3 — 1

″, #16 AWG into Hairpin

L4 — 2 Turns, #16 AWG, 5/16 ID

RFC1 — 5.6

µH, Choke

RFC2 — VK200–4B

R1 — 150

Ω, 1.0 W Carbon

R2 — 10 k

Ω, 1/2 W Carbon

R3 — 120

Ω, 1/2 W Carbon

Board Material — 0.062

″ Fiberglass (G10),

1 oz. Copper Clad, 2 Sides,

εr = 5.0

REV 9

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