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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF6611PBF датащи(PDF) 2 Page - International Rectifier |
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IRF6611PBF датащи(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRF6611PbF 2 www.irf.com Notes:
Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400µs; duty cycle ≤ 2%. Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 23 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 2.0 2.6 m Ω ––– 2.6 3.4 VGS(th) Gate Threshold Voltage 1.35 ––– 2.25 V ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -6.7 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 100 ––– ––– S Qg Total Gate Charge ––– 37 56 Qgs1 Pre-Vth Gate-to-Source Charge ––– 9.8 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 3.3 ––– nC Qgd Gate-to-Drain Charge ––– 12.5 Qgodr Gate Charge Overdrive ––– 11.4 ––– See Fig. 15 Qsw Switch Charge (Qgs2 + Qgd) ––– 15.8 ––– Qoss Output Charge ––– 23 ––– nC RG Gate Resistance ––– ––– 2.3 Ω td(on) Turn-On Delay Time ––– 18 ––– tr Rise Time ––– 57 ––– td(off) Turn-Off Delay Time ––– 24 ––– ns tf Fall Time ––– 6.5 ––– Ciss Input Capacitance ––– 4860 ––– Coss Output Capacitance ––– 1030 ––– pF Crss Reverse Transfer Capacitance ––– 480 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 110 (Body Diode) A ISM Pulsed Source Current ––– ––– 220 (Body Diode) g VSD Diode Forward Voltage ––– ––– 1.0 V trr Reverse Recovery Time ––– 24 36 ns Qrr Reverse Recovery Charge ––– 16 24 nC MOSFET symbol Clamped Inductive Load VDS = 15V, ID = 22A Conditions See Fig. 16 & 17 ƒ = 1.0MHz VDS = 16V, VGS = 0V VDD = 16V, VGS = 4.5V i VDS = 15V VGS = 4.5V, ID = 22A i VDS = VGS, ID = 250µA VDS = 24V, VGS = 0V Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 27A i TJ = 25°C, IF = 22A di/dt = 100A/µs i See Fig. 18 TJ = 25°C, IS = 22A, VGS = 0V i showing the integral reverse p-n junction diode. ID = 22A VGS = 0V VDS = 15V ID = 22A VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 4.5V |
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