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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2SC9015 датащи(PDF) 1 Page - KEC(Korea Electronics) |
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2SC9015 датащи(HTML) 1 Page - KEC(Korea Electronics) |
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1 / 2 page  2003. 3. 25 1/2 SEMICONDUCTOR TECHNICAL DATA KTC9015S EPITAXIAL PLANAR PNP TRANSISTOR Revision No : 1 GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Excellent h FE Linearity : hFE(IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.). ・Low Noise :NF=1dB(Typ.) at f=1kHz. ・Complementary to KTC9014S. MAXIMUM RATING (Ta=25 ℃) DIM MILLIMETERS SOT-23 A B C D E 2.93 0.20 1.30+0.20/-0.15 0.40+0.15/-0.05 2.40+0.30/-0.20 G 1.90 H J K L M N 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 Q 0.1 MAX 0.20 MIN 1.00+0.20/-0.10 M E 1 2 3 B 1.30 MAX LL PP P7 + _ Q 1. EMITTER 2. BASE 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25 ℃) Note : hFE Classification B:100 ～300, C:200～600 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -50 nA Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -100 nA DC Current Gain hFE (Note) VCE=-5V, IC=-1mA 100 - 600 Collector-Emitter Saturation Voltage VCE(sat) IC=-100mA, IB=-10mA - -0.1 -0.3 V Transition Frequency fT VCE=-10V, IC=-1mA, f=100MHz 60 - - MHz Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 4.0 7.0 pF Noise Figure NF VCE=-6V, IC=-0.1mA, Rg=10kΩ, f=1kHz - 1.0 10 dB CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current IC -150 mA Emitter Current IE 150 mA Collector Power Dissipation PC * 350 mW Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55 ～150 ℃ * PC : Package Mounted On 99.5% Alumina (10×8×0.6㎜) h Rank Type Name Marking Lot No. BE FE |
Аналогичный номер детали - 2SC9015 |
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Аналогичное описание - 2SC9015 |
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ссылки URL |
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