MRF141 datasheet(2/10 Pages) MACOM

2 / 10 page

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS (1)

Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA)

V(BR)DSS

—

Vdc

Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0)

IDSS

—

5.0

mAdc

Gate–Body Leakage Current (VGS = 20 V, VDS = 0)

IGSS

—

1.0

µAdc

ON CHARACTERISTICS (1)

Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)

VGS(th)

1.0

3.0

5.0

Vdc

Drain–Source On–Voltage (VGS = 10 V, ID = 10 A)

VDS(on)

0.1

0.9

1.5

Vdc

Forward Transconductance (VDS = 10 V, ID = 5.0 A)

gfs

5.0

7.0

—

mhos

DYNAMIC CHARACTERISTICS (1)

Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)

Ciss

—

350

—

Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)

Coss

—

420

—

Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)

Crss

—

FUNCTIONAL TESTS

Common Source Amplifier Power Gain, f = 30; 30.001 MHz

(VDD = 28 V, Pout = 150 W (PEP), IDQ = 250 mA)

f = 175 MHz

Gps

—

Drain Efficiency

(VDD = 28 V, Pout = 150 W (PEP), f = 30; 30.001 MHz,

IDQ = 250 mA, ID (Max) = 5.95 A)

—

Intermodulation Distortion (1)

(VDD = 28 V, Pout = 150 W (PEP), f = 30 MHz,

f2 = 30.001 MHz, IDQ = 250 mA)

IMD(d3)

IMD(d11)

—

–30

–60

–28

—

Load Mismatch

(VDD = 28 V, Pout = 150 W (PEP), f1 = 30; 30.001 MHz,

IDQ = 250 mA, VSWR 30:1 at all Phase Angles)

No Degradation in Output Power

CLASS A PERFORMANCE

Intermodulation Distortion (1) and Power Gain

(VDD = 28 V, Pout = 50 W (PEP), f1 = 30 MHz,

f2 = 30.001 MHz, IDQ = 4.0 A)

GPS

IMD(d3)

IMD(d9 – 13)

—

–50

–75

—

NOTE:

1. To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.

Figure 1. 30 MHz Test Circuit (Class AB)

C2, C5, C6, C7, C8, C9 — 0.1

µF Ceramic Chip or

Monolythic with Short Leads

C3 — Arco 469

C4 — 820 pF Unencapsulated Mica or Dipped Mica

with Short Leads

C10 — 10

µF/100 V Electrolytic

C11 — 1

µF, 50 V, Tantalum

C12 — 330 pF, Dipped Mica (Short leads)

L1 — VK200/4B Ferrite Choke or Equivalent, 3.0

µH

L2 — Ferrite Bead(s), 2.0

µH

R1, R2 — 51

Ω/1.0 W Carbon

R3 — 1.0

Ω/1.0 W Carbon or Parallel Two 2 Ω, 1/2 W Resistors

R4 — 1 k

Ω/1/2 W Carbon

T1 — 16:1 Broadband Transformer

T2 — 1:25 Broadband Transformer

Board Material — 0.062

″ Fiberglass (G10),

1 oz. Copper Clad, 2 Sides,

er = 5

–C5

RF INPUT

D.U.T.

C10

28 V

–

OUTPUT

–

BIAS

0 – 12 V

C11

C12

REV 9

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