MRF136 datasheet(7/11 Pages) MACOM

номер детали	MRF136

подробное описание детали	N-CHANNEL MOS BROADBAND RF POWER FET

PDF	11 Pages

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производитель	MACOM [Tyco Electronics]

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Figure 16. Large–Signal Series Equivalent

Input Impedance, Zin†

Figure 17. Large–Signal Series Equivalent

Output Impedance, ZOL*

Figure 18. Input and Outut Impedance

400

200

150

f = 100 MHz

Zin{

VDD = 28 V, IDQ = 25 mA,

Pout = 15 W

{27 Ω Shunt Resistor Gate–to–Ground

MHz

Zin{

OHMS

100

150

200

400

7.5 – j9.73

4.11 – j7.56

2.66 – j6.39

2.39 – j2.18

400

200

150

f = 100 MHz

ZOL*

VDD = 28 V, IDQ = 25 mA,

Pout = 15 W

ZOL* = Conjugate of the

optimum load impedance into

which the device operates at

a given output power, voltage

and frequency.

MHz

ZOL*

OHMS

100

150

200

400

13.7 – j16.8

9.08 – j15.38

4.74 – j8.92

4.28 – j4.17

400

225

150

f = 30 MHz

ZOL*

100

Zin

f = 30 MHz

100

150

225

400

Feedback loops: 560 ohms in series with 0.1

µF

Drain to gate, each side of push–pull FET

ZOL* = Conjugate of the optimum load imped-

ance into which the device operates at a given

output power, voltage and frequency.

VDD = 28 V, IDQ = 100 mA,

Pout = 30 W

MHz

Zin{

Ohms

ZOL*

Ohms

100

150

225

400

59.3 – j24

48 – j33.5

20.5 – j34.2

4.77 – j25.4

– j9.5

2.34 – j3.31

40.1 – j8.52

37 – j11.9

29 – j16.5

20.6 – j19

13 – j16.7

10.2 – j14.3

Zin & ZOL* are given

from drain–to–drain and

gate–to–gate respectively.

REV 7

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