MRF1000MB datasheet(2/4 Pages) MACOM

2 / 4 page

ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 28 Vdc, IE = 0, f = 1.0 MHz)

Cob

—

2.0

5.0

FUNCTIONAL TESTS

Common–Emitter Power Gain — Class A

(VCE = 18 Vdc, IC = 100 mAdc, f = 1090 MHz, Pout = 200 mW)

GPE

—

Common–Emitter Power Gain — Class AB

(VCE = 18 Vdc, ICQ = 10 mAdc, f = 1090 MHz, Pout = 0.7 W)

GPE

—

10.7

—

Load Mismatch — Class A

(VCE = 18 Vdc, IC = 100 mAdc, f = 1090 MHz, Pout = 200 mW,

VSWR = 10:1 All Phase Angles)

No Degradation in Power Output

Figure 1. 1090 MHz Test Circuit

C1, C2, C3, C7, C8, C10 — 220 pF ATC 100 mil

C4, C9 — 4.7

µF 50 V Tantalum

C5, C6 — 0.8–8.0 pF Johanson #7290

Z1–Z10 — Distributed Microstrip Elements

Z1–Z10 — See Figure 8

Board Material — 0.031

″ Thick Teflon–Fiberglass

Board Material —

εr = 2.56

Class AB Bias Control Circuit

18 V Output ICQ 10 mA Nominal

Class A Constant Current Bias Control Circuit

IC = 100 mA, VCE = 18 V

BASE BIAS INPUT

INPUT

OUTPUT

Z10

COLLECTOR BIAS INPUT

DUT

C10

330

1/2 W

10 µF

50 V

0.1 µF

50 V

0.1 µF

50 V

+18 V INPUT

+18 V COLLECTOR BIAS

OUTPUT TO POINT C

BASE BIAS OUTPUT

TO POINT B

11 k

1/2 W

18 k

1/2 W

100

2 W

10 µF

50 V

0.1 µF

50 V

1 k

1/2 W

2.2 k

1/2 W

0.1 µF

50 V

0.1 µF

50 V

2N3906

+28 V INPUT

+18 V COLLECTOR BIAS

OUTPUT TO POINT C

BASE BIAS OUTPUT

TO POINT B

Replaces MRF1000MA/D

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