RN2107CT datasheet(2/6 Pages) TOSHIBA

номер детали	RN2107CT

подробное описание детали	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

PDF	6 Pages

Scroll/Zoom	100%

производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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2 / 6 page

RN2107CT ~ RN2109CT

2010-08-20

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

ICBO

VCB = −20 V, IE = 0

⎯

−100

Collector cut-off current

RN2107CT to 2109CT

ICEO

VCE = −20 V, IB = 0

⎯

−500

RN2107CT

VEB = −6 V, IC = 0

−0.088

⎯

−0.131

RN2108CT

VEB = −7 V, IC = 0

−0.085

⎯

−0.126

Emitter cut-off current

RN2109CT

IEBO

VEB = −15 V, IC = 0

−0.182

⎯

−0.271

RN2107CT

120

⎯

RN2108CT

120

⎯

DC current gain

RN2109CT

hFE

VCE = −5 V,

IC = −10 mA

100

⎯

Collector-emitter

saturation voltage

RN2107CT to 2109CT

VCE (sat)

IC = −5 mA,

IB = −0.25 mA

⎯

−0.15

RN2107CT

−0.7

⎯

−1.5

RN2108CT

−0.8

⎯

−2.2

Input voltage (ON)

RN2109CT

VI (ON)

VCE = −0.2 V,

IC = −5 mA

−1.6

⎯

−5.0

RN2107CT

−0.5

⎯

−1.0

RN2108CT

−0.6

⎯

−1.1

Input voltage (OFF)

RN2109CT

VI (OFF)

VCE = −5 V,

IC = −0.1 mA,

−1.3

⎯

−2.6

Collector output

capacitance

RN2107CT to 2109CT

Cob

VCB = −10 V, IE = 0,

= 1 MHz

⎯

1.2

⎯

RN2107CT

RN2108CT

17.6

26.4

Input resistor

RN2109CT

⎯

37.6

56.4

RN2107CT

0.17

0.21

0.26

RN2108CT

0.37

0.47

0.56

Resistor ratio

RN2109CT

R1/R2

⎯

1.71

2.14

2.56

⎯

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