Features

• Low Voltage Operation 2.5V

• Low Harmonics > 65 dBc at +34 dBm & 1 GHz

• Low Insertion Loss 0.6 dB at 1 GHz

• High Isolation 23 dB at 2 GHz

• Miniature FQFP 16-lead 4x4mm Package

• 0.5 micron GaAs pHEMT Process

Description

M/A-COM’s MASWSS0020 is a GaAs PHEMT MMIC

single pole four throw (SP4T) high power switch in a low

cost miniature FQFP 16-lead 4x4mm package.

The

MASWSS0020 is ideally suited for applications where high

power, low control voltage, low insertion loss, high isola-

tion, small size and low cost are required. Typical applica-

tions are for GSM and DCS handset systems that connect

separate transmit and receive functions to a common an-

tenna, as well as other handset and related applications.

This part can be used in all systems operating up to 3 GHz

requiring high power at low control voltage.

The MASWSS0020 is fabricated using a 0.5 micron gate

length GaAs PHEMT process. The process features full

passivation for performance and reliability.

GaAs SP4T 2.5V High Power Switch

DC - 3 GHz

PIN

No.

PIN Name

Description

1

V1

Control 1

2

RF1

RF Port 1

3

GND

RF Ground

4

RF2

RF Port 2

5

GND

RF Ground

6

V2

Control 2

7

V3

Control 3

8

GND

RF Ground

9

RF3

RF Port 3

10

GND

RF Ground

11

GND

RF Ground

12

RF4

RF Port 4

13

GND

RF Ground

14

V4

Control 4

15

GND

RF Ground

16

ANT

Antenna Port

17

GND (paddle)

RF Ground

Functional Schematic

Pin Configuration

Preliminary

Jan 16 2002

Parameter

Absolute

Maximum

Max Input Power (0.5 - 3 GHz,

2.5V Control)

+38 dBm

Operating Voltage

+8.5 volts

Operating Temperature

Storage Temperature

1. Exceeding any one or combination of these limits may

cause permanent damage.

RF2

RF3

RF1

V1

GND

39 pF

39 pF

PIN 1

39 pF

GND

GND

RF4

39 pF

PIN 16