V 2.00

GaAs SPDT Switch

DC - 20 GHz

MASW20000

Guaranteed Specifications* @ +25°C**

Frequency Range

DC-20.0 GHz

Insertion Loss

DC-10.0 GHz

1.7 dB Max

DC-18.0 GHz

2.1 dB Max

DC-20.0 GHz

2.5 dB Max

VSWR

DC-10.0 GHz

1.60:1 Max

DC-18.0 GHz

1.80:1 Max

DC-20.0 GHz

2.00:1 Max

Isolation

DC-10.0 GHz

50 dB Min

DC-18.0 GHz

42 dB Min

DC-20.0 GHz

40 dB Min

Operating Characteristics

Impedance

50

Ω Nominal

Switching Characteristics

Trise, Tfall (10/90% or 90/10% RF)

2 ns Typ

Ton, Toff (50% CTL to 90/10% RF)

3 ns Typ

Transients (in-Band)

20 mV Typ

Input Power for 1 dB Compression

Control Voltages (Vdc)

0/-5

0.5-20 GHz

+25 dBm Typ

0.05 GHz

+18 dBm Typ

Intermodulation Intercept point (for two-tone input power up to +5 dBm)

Intercept Points

IP2

IP3

0.5-20 GHz

+59 dBm

+43 dBm Typ

0.05 GHz

+27 dBm Typ

Control Voltages (Complimentary Logic)

Vin Low

0 to -0.2 V @ 5 µA Max

Vin Hi

-5 V @50 µA Max

Die Size

0.083”x 0.035”X 0.004”

(2.10mm X 0.89mm X 0.10mm)

* Wafer level data.All specifications apply with 50

Ω impedance connected

to all RF ports, 0 and -5 Vdc control voltages.

** Loss change 0.0025 dB/°C . (From -55°C to +85°C)

Features

Very Broadband Performance

Low Insertion Loss, 1.75 dB Typical @ 18 GHz

High Isolation, 50 dB Typical @ 18 GHz

Fast Switching Time, 2 nS Typical

Reflective Configuration

Ultra Low DC Power Consumption

Via Hole Grounding

Typical Performance

GND

A1

B2

B1

A2

RF

GND

GND

RF2

GND

GND

RF1

GND

Schematic

q

q

q

q

q

q

q

INSERTION LOSS (dB)

2.0

1.5

1.0

0.5

0.0

80

60

40

20

0

2.0

1.8

1.6

1.4

1.2

1.0

0

4

8

12

16

20

0

4

8

12

16

20

0

4

8

12

16

20

ISOLATION (dB)

VSWR

FREQUENCY (GHz)

Input

Output