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RFSA2714 датащи(PDF) 2 Page - RF Micro Devices

номер детали RFSA2714
подробное описание детали  Parallel Controlled Digital Step Attenuator 50MHz to 4000MHz
PDF  9 Pages
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производитель  RFMD [RF Micro Devices]
домашняя страница  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RFSA2714 датащи(HTML) 2 Page - RF Micro Devices

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RFSA2714
DS130211
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ((+1) 336-678-5570 or c
customerservice@rfmd.com.
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
+5.5
V
DC Supply Current
15
mA
Power Dissipation
83
mW
Max RF Input Power
27
dBm
Operating Temperature (TCASE)
-40 to +85
°C
Storage Temperature
-40 to +150
°C
Junction Temperature
150
°C
ESD Rating (HBM)
Class 1B
Moisture Sensitivity Level
MSL1
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Frequency Range
50
4000
MHz
Insertion Loss
0.85
dB
150MHz, 0dB attenuation
1.1
dB
850MHz, 0dB attenuation
1.7
dB
2700MHz, 0dB attenuation
2.1
dB
3800MHz, 0dB attenuation
Gain Control Range
31.75
dB
0.25dB step size
Step Accuracy
±(0.1 + 5% attenuation setting)
dB
Input IP3
50
dBm
100MHz to 4000MHz
Input P0.1dB
25
dBm
1000MHz
Return Loss
15
dB
DC to 3000MHz, all states
Control Interface
7-bit, Parallel
Parallel Interface
Settling Time
200
ns
tRISE, tFALL (10%/90% RF)
Switching Speed
200
ns
tON, tOFF (50% CTL to 10%/90% RF)
Supply Voltage (VDD)
4.75
5.0
5.25
V
Supply Current
7.5
mA
Control Voltage (VCTL)
Low, VCTL = 0 to 0.8
High, VCTL = 2.0 to VDD
V
Notes:
1. VDD = 5V, VCTL= 5V, T = 25°C.
2. Broadband Application Circuit (with ACG caps).
3. IIP3 measured with PIN = +10dBm/tone, 1MHz spacing.
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.



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