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RFPD2930 датащи(PDF) 3 Page - RF Micro Devices

номер детали RFPD2930
подробное описание детали  GaAs/GaN Power Doubler Hybrid 45MHz to 1003MHz
PDF  5 Pages
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производитель  RFMD [RF Micro Devices]
домашняя страница  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RFPD2930 датащи(HTML) 3 Page - RF Micro Devices

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RF Micro Devices Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421
DS140226
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
3 of 5
RFPD2930
Current Adjustment Using Hybrid Pin 4
The RFPD2930 can be operated over a wide range of current to provide maximum required performance with minimum current
consumption. A single external resistor connected between pin 4 and GND allows variation of current between 430mA and 220mA
(typ.). Within the recommended range of current between 430mA and 370mA gain (S21) change is less than 0.2dB and noise
figure change is less than 0.1dB. If pin 4 is not connected the devices operates at maximum current, see table below.
Examples of connecting pin 4:
Device current [mA], typical
External resistor [Ω]
430
>50k (open)
420
18k
400
6k8
370
3k
340
1k8
320
1k
220
0 (short)
V+ = 24V; TMB = 30°C;
ZS = ZL = 75Ω



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