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RFPA2235 датащи(PDF) 3 Page - RF Micro Devices

номер детали RFPA2235
подробное описание детали  Single-Stage Power Amplifier 2W, 700MHZ to 2700MHZ
PDF  20 Pages
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производитель  RFMD [RF Micro Devices]
домашняя страница  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RFPA2235 датащи(HTML) 3 Page - RF Micro Devices

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RFPA2235
DS121121
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
2.58GHz to 2.69GHz
VCC = 5.0V, Temp = 25°C, Optimized for -60dBc ACPR
power
Frequency
2.64
GHz
Input Power (PIN)
17
dBm
Max Recommended Continuous CW Input Power,
VCC=5.0V, Load VSWR=2:1
Gain (S21)
10.7
12.2
13.7
dB
ACPR
-60
-55
dBm
RF Output Power = 19dBm, WCDMA 3GPP 3.5, test model
1, 64 DPCH
P1dB
31
dBm
OIP3
44
dBm
15dBm per tone, 1MHz Spacing. Optimized for best ACPR.
Input Return Loss (S11)
18
dB
Output Return Loss (S22)
10
dB
Noise Figure
5.4
dB
Power Supply
VCC = 5.0V, Bias Conditions
Collector Current (Quiescent)
400
455
525
mA
At VCC = 5.0V, Temp = 25°C, optimized for max PAE at
rated linear power
Collector Voltage (VCC)4.75
5
5.25
V
VBIAS
4.75
5
5.25
V
VBIAS = VCC under normal operating condition
VREG
5
5
5
V
Normal operating condition
Collector Leakage Current
(shutdown)
100
A
VCC = VBIAS = 5V, VREG = 0V
Thermal Resistance (RTH)
14
°C/W
Junction-to-backside of package



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