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Optimum Technology Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

Functional Block Diagram

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.

Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at ((+1) 336-678-5570 or c

customerservice@rfmd.com.

Ordering Information

BiFET HBT

1

2

3

4

RF Input

GND RF Output

GND

RFPA2089

InGaP HBT POWER AMPLIFIER

0.25W, 50MHz to 2700MHz

The RFPA2089 is a single-stage InGaP HBT power amplifier specifically designed

for wireless infrastructure applications. It offers high-gain linear operation at a com-

parably low DC power making it ideal for next generation radios requiring high effi-

ciency. Its external matching allows for use across various radio platforms.

Features

Ratio

Applications

Transceivers

Wireless Infrastructure

LTE Transceiver Applications

DS130211

9

Package: SOT-89

RFPA2089

InGaP HBT

Power Ampli-

fier 0.25W,

50MHz to

2700MHz

RFPA2089SR

7” Reel with 100 pieces

RFPA2089SQ

Sample bag with 25 pieces

RFPA2089TR13

13” Reel with 2500 pieces

RFPA2089PCK-410 2.11GHz to 2.17GHz PCBA with 5-piece sample bag

RFPA2089PCK-411 2.6GHz to 2.7GHz PCBA with 5-piece sample bag

RFPA2089PCK-412 869MHz to 894MHz PCBA with 5-piece sample bag