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RFPA2013 датащи(PDF) 2 Page - RF Micro Devices

номер детали RFPA2013
подробное описание детали  GaAs HBT Power Amplifier 0.5W, 400MHz to 2700MHz
PDF  20 Pages
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производитель  RFMD [RF Micro Devices]
домашняя страница  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RFPA2013 датащи(HTML) 2 Page - RF Micro Devices

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RFPA2013
DS130219
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ((+1) 336-678-5570 or c
customerservice@rfmd.com.
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage (VCC, VBIAS)
6.0
V
DC Supply Current (ICC)380
mA
CW Input Power, 2:1 Output VSWR
20
dBm
Output Load VSWR at P3dB
5:1
Operating Junction Temperature
160
°C
Operating Temperature Range (TL)
-40 to +85
°C
Storage Temperature
-40 to +150
°C
ESD Rating – Human Body Model (HBM)
Class 1C
Moisture Sensitivity Level
MSL-1
Notes:
1. The maximum ratings must all be met simultaneously.
2. PDISS = PDC + PRFIN - PRFOUT
3. TJ = TL + PDISS * RTH
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
869MHz to 894MHz
VCC = 5.0V, ICQ = 165mA, linear tune
Frequency
880
MHz
EVB tuned for WCDMA 60dBc linear operation
Input Power (PIN)
10
dBm
Max recommended continuous input power,
VCC < 6.0V, load VSWR < 2:1
Gain (S21)
21.8
dB
OIP3
41
dBm
15dBm/tone, tone spacing = 1MHz
P1dB
27.5
dBm
EVB tuned for linear operation
Input Return Loss (S11)
14
dB
Output Return Loss (S22)
8
dB
Noise Figure
3.8
dB
WCDMA Channel Power at -55dBc
ACPR
16.5
dBm
3GPP 3.5, test model 1, 64 DPCH
2110MHz to 2170MHz
VCC = 5.0V, ICQ = 165mA, linear tune
Frequency
2140
MHz
EVB tuned for WCDMA 60dBc linear operation
Input Power (PIN)
16
dBm
Max recommended continuous input power,
VCC < 6.0V, load VSWR < 2:1
Gain (S21)
15.7
dB
OIP3
41.5
dBm
15dBm/tone, tone spacing = 1MHz
P1dB
27
dBm
EVB tuned for linear operation
Input Return Loss (S11)
14
dB
Output Return Loss (S22)
10.5
dB
Noise Figure
3.8
dB
WCDMA Channel Power at -55dBc
ACPR
16.5
dBm
3GPP 3.5, test model 1, 64 DPCH
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.



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