1 of 9

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

Functional Block Diagram

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mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.

Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.

Ordering Information

BiFET HBT

RFPA1702

17.7GHz TO 19.7GHz HIGH LINEARITY

POWER AMPLIFIER

RFMD's RFPA1702 is a high linearity power amplifier in a surface mount package

designed for use in transmitters that operate at frequencies between 17.7GHz to

19.7GHz. It provides 25dB of small-signal gain. This power amplifier is optimized for

linear operation with an output third order intercept point (OIP3) of ≥ +40.0dBm.

The RFPA1702 is manufactured with depletion mode GaAs pHEMT process.

Features



Frequency Range: 17.7GHz to

19.7GHz



Small Signal Gain: 25dB



IM3 at +17dBm (SCL): +52dBc



IM3 at +21dBm (SCL): +43dBc



IM3 at +24dBm (SCL): +32.5dBc



OIP3 at +24dBm (SCL): +40dBm



P1dB: +31dBm



RL (Input): 12dB



RL (Output): 8dB







6mm x 6mm QFN

Applications



Point-Point Radio



Point-Multipoint Radio

DS120601



Package: Ceramic QFN, 40-pin, 6mm x 6mm x 0.95mm

RFPA1702

17.7GHz to

19.7GHz High

Linearity

RFPA1702S2

2-Piece sample bag

RFPA1702SB

5-Piece bag

RFPA1702SQ

25-Piece bag

RFPA1702SR

100-Piece reel

RFPA1702TR7

750-Piece 7” reel

RFPA1702PCBA-410

Evaluation Board