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RFFM6403 датащи(PDF) 2 Page - RF Micro Devices

номер детали RFFM6403
подробное описание детали  2.5V to 4.2V, ISM Band, 1W, 405MHz to 475MHz Transmit/Receive Module
PDF  10 Pages
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производитель  RFMD [RF Micro Devices]
домашняя страница  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RFFM6403 датащи(HTML) 2 Page - RF Micro Devices

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Revision DS20151612
Disclaimer: Subject to change without notice
© 2015 RF Micro Devices, Inc.
www.rfmd.com / www.qorvo.com
2 of 10
RFFM6403
RFMD + TriQuint = Qorvo
Absolute Maximum Ratings
Parameter
Rating
Unit
Voltage
5.25
V
Storage Temperature Range
-40 to +150
°C
Operating Temperature Range
-40 to +85
°C
Receive RF Input Power (SAW2)
+25
dBm
Transmit RF Input Power (PA Enabled)
+15
dBm
Transmit RF Input Power (PA Bypass)
+20
dBm
Receive RF Input Power (ANT)
+33
dBm
T/R Port Load VSWR in Transmit Mode
10:1
ESD, HBM
350
V
ESD, CDM
300
V
Moisture Sensitivity Level
MSL3
Caution! ESD sensitive device.
RFMD Green: RoHS status based on EU
Directive 2011/65/EU (at time of this
document revision), halogen free per IEC
61249-2-21, < 1000ppm each of
antimony trioxide in polymeric materials
and red phosphorus as a flame retardant,
and <2% antimony in solder.
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
Nominal Operating Parameters
Parameter
Specification
Unit
Condition
Min
Typ
Max
Frequency
405
440
475
MHz
RF Port Impedance
50
Operating Voltage
2.5
3.6
4.2
V
Leakage Current
VCCTx1 = 3.6V, VCCTx2 = 3.6V, VDD = 3.6V, VCCRx = 3.6V,
VAPC = 0.0V, EN = 0.0V, TR = 0.0V, BYP = 0.0V, RF = Off,
Temperature = 25ºC
VDD
0.05
0.1
µA
VCC TX
0.05
0.1
µA
VCC RX
0.05
0.1
µA
Operating Voltages
VCC TX1/2
2.5
3.6
4.2
V
VCC RX
2.5
3.3
4.2
V
VDD
2.5
3.6
4.2
V
Tx Output Power Control (VAPC)
0.00
2.25
2.50
V
VAPC operates such that the transmitter output power is saturated at a level
lower than 1.9V and minimal variation in output power of the device occurs
above that level



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