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RF6509 датащи(PDF) 3 Page - RF Micro Devices

номер детали RF6509
подробное описание детали  2.7V TO 3.6V MODULE FOR INTEGRATION WITH 900MHz SMART ENERGY AMI
PDF  12 Pages
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производитель  RFMD [RF Micro Devices]
домашняя страница  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RF6509 датащи(HTML) 3 Page - RF Micro Devices

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RF6509
DS121128
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
LNA Section (continued)
LOW GAIN MODE
LNAVCC = 3.0V, LNAVREF = 3.0V, LNAVSEL =
0.0V, PABIAS = 0.0V, PAVREG = 0.0V
Gain
-6
dB
Noise Figure
6
dB
Supply Current
3
mA
LNAVCC Voltage
2.7
3.0
V
LNAVREF Logic Level HIGH
2.7
3.0
V
LNAVREF Logic Level LOW
0.0
0.3
V
LNAVSEL Logic Level HIGH
1.8
3.0
V
LNAVSEL Logic Level LOW
0.8
V
Power Down Current
10
A
LNA_EN = LOW, LNAVSEL = LOW
Transceiver Switch Section
Insertion Loss TXin-PAin
0.9
1
1.1
dB
V1S1 = 3.0V, V2S1 = 0.0V, V3S1 = 0.0V
Isolation TXin-PAin
25
27
dB
V1S1 = 0.0V, V2S1 = 3.0V, V3S1 = 0.0V or
V1S1 = 0.0V, V2S1 = 0.0V, V3S1 = 3.0V
TXin/RXout Return Loss (Thru
path)
-15
-14
dB
V1S1 = 0.0V, V2S1 = 3.0V, V3S1 = 0.0V and
V1S2 = 0.0V, V2S2 = 3.0V, V3S2 = 0.0V
TXin/RXout Return Loss (Transmit
path)‘
-9
dB
V1S1 = 3.0V, V2S1 = 0.0V, V3S1 = 0.0V and
V1S2 = 0.0V, V2S2 = 0.0V, V3S2 = 3.0V
TXin/RXout Return Loss (Receive
path)
-9
dB
V1S1 = 0.0V, V2S1 = 0.0V, V3S1 = 3.0V and
V1S2 = 3.0V, V2S2 = 0.0V, V3S2 = 0.0V
Switch Control Logic HIGH
2.7
3.0
V
Switch Control Logic LOW
0.0
0.4
V
Switch Control Current
13.0
15.0
A



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