CWDM305PD

SURFACE MOUNT

DUAL P-CHANNEL

ENHANCEMENT-MODE

SILICON MOSFET

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CWDM305PD

is a dual high current P-channel enhancement-mode

silicon MOSFET manufactured by the P-channel

DMOS process, and is designed for high speed pulsed

amplifier and driver applications. This MOSFET offers

high current, low rDS(ON), low threshold voltage, and

low gate charge.

MARKING CODE: C503

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

16

V

Continuous Drain Current (Steady State)

ID

5.3

A

Maximum Pulsed Drain Current, tp=10μs

IDM

21.2

A

Power Dissipation

PD

2.0

W

Operating and Storage Junction Temperature

TJ, Tstg

-55 to +150

°C

Thermal Resistance

ΘJA

62.5

°C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

IGSSF, IGSSR

VGS=20V, VDS=0

100

nA

IDSS

VDS=30V, VGS=0

1.0

μA

BVDSS

VGS=0, ID=250μA

30

V

VGS(th)

VGS=VDS, ID=250μA

1.0

3.0

V

rDS(ON)

VGS=10V, ID=2.7A

0.066

0.072

Ω

rDS(ON)

VGS=5.0V, ID=2.7A

0.077

0.083

Ω

gFS

VDS=5.0V, ID=5.3A

11

S

Crss

VDS=10V, VGS=0, f=1.0MHz

50

60

pF

Ciss

VDS=10V, VGS=0, f=1.0MHz

500

590

pF

Coss

VDS=10V, VGS=0, f=1.0MHz

60

150

pF

Qg(tot)

VDD=15V, VGS=5.0V, ID=5.3A

4.7

7.0

nC

Qgs

VDD=15V, VGS=5.0V, ID=5.3A

1.4

2.1

nC

Qgd

VDD=15V, VGS=5.0V, ID=5.3A

1.7

2.5

nC

ton

VDD=15V, ID=5.3A, RG=10Ω

7.0

ns

toff

VDD=15V, ID=5.3A, RG=10Ω

8.0

ns

FEATURES:

APPLICATIONS:

SOIC-8 CASE

R2 (23-August 2012)

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