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HTB1A60 датащи(PDF) 3 Page - SemiHow Co.,Ltd. |
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HTB1A60 датащи(HTML) 3 Page - SemiHow Co.,Ltd. |
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3 / 6 page ![]() ◎ SEMIHOW REV.A1,March 2013 Typical Characteristics Fig 1. R.M.S. current vs. Power dissipation Fig 2. R.M.S. current vs. Case temperature Fig 3. Gate power characteristics Fig 4. Surge on state current rating (Non-repetitive) Fig 5. Gate trigger current vs. junction temperature Fig 6. Gate trigger voltage vs. junction temperature 0.0 0.2 0.4 0.6 0.8 1.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 180 o 150 o 120 o 90 o 60 o 30 o R.M.S. on state current, I T(RMS) [A] -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 V +GT1 V -GT1 V +GT3 V -GT3 Junction temperature, T J[ oC] 10 0 10 1 10 2 0 3 6 9 12 15 50Hz 60Hz Time [cycles] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 70 80 90 100 110 120 130 180 o 150 o 120 o 90 o 60 o 30 o R.M.S. on state current, I T(RMS) [A] -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 I +GT3 Junction Temperature, T J[ oC] I +GT1 I -GT1 I -GT3 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 25[ oC] I +GT3 25[ oC] I +GT1 I -GT1 I -GT3 P G(AV)(0.2W) P GM(2W) V GD Gate current, I G [mA] |
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